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N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150
MOSFET N-CH 25V 28A/100A 8VSON
Manufacturer: Texas Instruments
Win Source Part Number: 013350-CSD16403Q5A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta)
Family Name: CSD16403Q5A
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSON (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 28A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 1.9V @ 250μA
Max Gate Charge: 18nC @ 4.5V
Max Input Capacitance: 2660pF @ 12.5V
Maximum Gate-Source Voltage: +16V, -12V
Maximum Rds On at Id,Vgs: 2.8 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): SiR844DP-T1-GE3SiR84
Introduction Date: April 01, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2031
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
MOSFET N-Ch NexFET Power MOSFETs
MOSFET N-CH 25V 28A/100A 8VSON
N-Channel 25V 28A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6)
N-Channel 25V 28A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6)
N-Channel 25V 28A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6)
| Texas Instruments | Shenzhen Shengyu Electronics Technology Limited | Win Source Electronics | VAST STOCK CO., LIMITED | LIXINC Electronics Co., Limited | DigiKey | |
|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF MOSFET Transistors | Transistors |
| Product Number | CSD16403Q5A | CSD16403Q5A | 013350-CSD16403Q5A | CSD16403Q5A | CSD16403Q5A | 296-24249-2-ND |
| Product Name | CSD16403Q5A N-Channel NexFET™ Power MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD16403Q5A | MOSFET | Discrete Semiconductor | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 25 volts | 25 volts | ||||
| rDS(on) | 0.0037 ohms | |||||
| IDSS | 184000 milliamps | |||||
| QG | 13.3 nC |
