N-Channel 25V 60A (Tc) 74W (Tc) Surface Mount 8-VSON-CLIP (3.3x3.3)
N-Channel 25V 60A (Tc) 74W (Tc) Surface Mount 8-VSON-CLIP (3.3x3.3)
N-Channel 25V 60A (Tc) 74W (Tc) Surface Mount 8-VSON-CLIP (3.3x3.3)
MOSFET N-CH 25V 60A 8VSON
Power Field-Effect Transistor, 60A I(D), 25V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
25V, N ch NexFET MOSFET™, single SON3x3, 4.8mOhm 8-VSON-CLIP -55 to 150 Product overview: CSD16327Q3T from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 4.8mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 4.8mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD16327Q3T can be used for catalog matching and distributor lookup.
Win Source Part Number: 1277966-CSD16327Q3T
Category: Discrete Semiconductor Products>Transistors
Series: NexFET™
Package: Tape & Reel
Standard Package: 250
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 8V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 12.5 V
Vgs (Max): +10V, -8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Texas Instruments
Other Names: 296-47650-6,296-4765
Base Product Number: CSD16327
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
MOSFET 25V, N ch NexFET MOSFETG , single SON3x3, 4.8mOhm 8-VSON-CLIP -55 to 150
MOSFET N-CH 25V 60A 8VSON
| DigiKey | ODG (Origin Data Global) | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 296-47650-2-ND | CSD16327Q3T | CSD16327Q3T | 278-CSD16327Q3T | 1277966-CSD16327Q3T | CSD16327Q3T | CSD16327Q3T |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 25V 4.8mOhm MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Package Type | 8-PowerTDFN | 8-PowerTDFN | VSON-CLIP (DQG) | SOT3 | 8-PowerTDFN | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 25 volts | ||||||
| IDSS | 60000 milliamps |
