N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150
Manufacturer: Texas Instruments
Win Source Part Number: 013345-CSD16321Q5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSON-CLIP (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 31A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 19nC @ 4.5V
Max Input Capacitance: 3100pF @ 12.5V
Maximum Gate-Source Voltage: +10V, -8V
Maximum Rds On at Id,Vgs: 2.4 mOhm @ 25A, 8V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Communications & Networking, Computers & Computer Peripherals, Industrial
MOSFET N-Channel 25V 31A NexFET SON8
MOSFET N-Channel 25V 31A NexFET SON8
MOSFET N-Channel 25V 31A NexFET SON8
MOSFET N-CH 25V 31A/100A 8VSON
N-Channel 25V 31A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6)
N-Channel 25V 31A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6)
N-Channel 25V 31A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6)
MOSFET, N CH, 25V, 100A, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.1V; Power RoHS Compliant: Yes
Trans MOSFET N-CH 25V 31A 8-Pin SON T/R
MOSFET N-CH 25V 31A/100A 8VSON
MOSFET N-Channel NexFET Power MOSFET
| Texas Instruments | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD16321Q5 | 013345-CSD16321Q5 | 8274684P | 8274684 | CSD16321Q5 | 296-24517-1-ND | 28AH2081 | 815-CSD16321Q5 | CSD16321Q5 | CSD16321Q5 |
| Product Name | CSD16321Q5 N-Channel NexFET™ Power MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD16321Q5 | MOSFETs | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N Ch, 25V, 100A, 8Son; Transistor Polarity Texas Instruments | Trans MOSFET N-CH 25V 31A 8-Pin SON T/R | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| V(BR)DSS | 25 volts | 25 volts | 25 volts | 25 volts | 25 volts | 25 volts | ||||
| rDS(on) | 0.0026 ohms | 0.0038 ohms | 0.0038 ohms | 0.0019 ohms | 0.0035 ohms | |||||
| IDSS | 200000 milliamps | 100000 milliamps | 100000 milliamps | 31000 milliamps | 100000 milliamps | |||||
| QG | 14 nC |
