Texas Instruments Standard Linear and Logic Single FETs, MOSFETs CSD13306WT

Description
N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5)
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Description
N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 296-41134-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-41134-6-ND
Single FETs, MOSFETs 296-41134-6-ND
N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5)

N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5)

Buy Now Datasheet
Single FETs, MOSFETs - 296-41134-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-41134-2-ND
Single FETs, MOSFETs 296-41134-2-ND
N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5)

N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5)

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Single FETs, MOSFETs - 296-41134-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-41134-1-ND
Single FETs, MOSFETs 296-41134-1-ND
N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5)

N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5)

Buy Now Datasheet
Singapore
N-Channel 10.2 mOhm MOSFET Transistor
278-CSD13306WT
N-Channel 10.2 mOhm MOSFET Transistor 278-CSD13306WT
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm 6-DSBGA -55 to 150 Product overview: CSD13306WT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 10.2 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10.2 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD13306WT can be used for catalog matching and distributor lookup.

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm 6-DSBGA -55 to 150 Product overview: CSD13306WT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 10.2 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10.2 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD13306WT can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - CSD13306WT - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
CSD13306WT
Single FETs, MOSFETs CSD13306WT
MOSFET N-CH 12V 3.5A 6DSBGA

MOSFET N-CH 12V 3.5A 6DSBGA

Supplier's Site Datasheet
 - CSD13306WT - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 3.5A I(D), 12V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 3.5A I(D), 12V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD13306WT - 771855-CSD13306WT - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD13306WT
771855-CSD13306WT
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD13306WT 771855-CSD13306WT
Manufacturer: Texas Instruments Win Source Part Number: 771855-CSD13306WT Series: NexFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 6-UFBGA, DSBGA Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Family Name: CSD13306W Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Manufacturer Package: 6-DSBGA (1x1.5) Channel Type Type: N Drain Source Voltage: 12V Vgs(th) (Maximum) @ Id: 1.3V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 11.2nC @ 4.5V Input Capacitance (Ciss) (Maximum) @ Vds: 1370pF @ 6V Vgs (Maximum): ±10V Power Dissipation (Maximum): 1.9W (Ta) Rds On (Maximum) @ Id, Vgs: 10.2 mOhm @ 1.5A, 4.5V Alternative Parts (Cross-Reference): CSD13306W; Introduction Date: March 19, 2015 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited

Manufacturer: Texas Instruments
Win Source Part Number: 771855-CSD13306WT
Series: NexFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 6-UFBGA, DSBGA
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Family Name: CSD13306W
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Manufacturer Package: 6-DSBGA (1x1.5)
Channel Type Type: N
Drain Source Voltage: 12V
Vgs(th) (Maximum) @ Id: 1.3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 11.2nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds: 1370pF @ 6V
Vgs (Maximum): ±10V
Power Dissipation (Maximum): 1.9W (Ta)
Rds On (Maximum) @ Id, Vgs: 10.2 mOhm @ 1.5A, 4.5V
Alternative Parts (Cross-Reference): CSD13306W;
Introduction Date: March 19, 2015
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CSD13306WT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CSD13306WT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CSD13306WT
MOSFET N-CH 12V 3.5A 6DSBGA

MOSFET N-CH 12V 3.5A 6DSBGA

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 12V N-Channel NexFET Power MOSFET

MOSFET 12V N-Channel NexFET Power MOSFET

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Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 296-41134-6-ND 278-CSD13306WT CSD13306WT CSD13306WT 771855-CSD13306WT CSD13306WT CSD13306WT
Product Name Single FETs, MOSFETs N-Channel 10.2 mOhm MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD13306WT Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type 6-UFBGA, DSBGA 6-UFBGA, DSBGA DSBGA6 SOT3 6-UFBGA, DSBGA
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 12 volts
IDSS 3500 milliamps
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