N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5)
N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5)
N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5)
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm 6-DSBGA -55 to 150 Product overview: CSD13306WT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 10.2 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10.2 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD13306WT can be used for catalog matching and distributor lookup.
MOSFET N-CH 12V 3.5A 6DSBGA
Power Field-Effect Transistor, 3.5A I(D), 12V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer: Texas Instruments
Win Source Part Number: 771855-CSD13306WT
Series: NexFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 6-UFBGA, DSBGA
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Family Name: CSD13306W
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Manufacturer Package: 6-DSBGA (1x1.5)
Channel Type Type: N
Drain Source Voltage: 12V
Vgs(th) (Maximum) @ Id: 1.3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 11.2nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds: 1370pF @ 6V
Vgs (Maximum): ±10V
Power Dissipation (Maximum): 1.9W (Ta)
Rds On (Maximum) @ Id, Vgs: 10.2 mOhm @ 1.5A, 4.5V
Alternative Parts (Cross-Reference): CSD13306W;
Introduction Date: March 19, 2015
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
MOSFET N-CH 12V 3.5A 6DSBGA
MOSFET 12V N-Channel NexFET Power MOSFET
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Rochester Electronics | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 296-41134-6-ND | 278-CSD13306WT | CSD13306WT | CSD13306WT | 771855-CSD13306WT | CSD13306WT | CSD13306WT |
| Product Name | Single FETs, MOSFETs | N-Channel 10.2 mOhm MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD13306WT | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Package Type | 6-UFBGA, DSBGA | 6-UFBGA, DSBGA | DSBGA6 | SOT3 | 6-UFBGA, DSBGA | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 12 volts | ||||||
| IDSS | 3500 milliamps |