Texas Instruments Standard Linear and Logic Single FETs, MOSFETs CSD13306WT

Description
N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5)
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Description
N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 296-41134-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-41134-6-ND
Single FETs, MOSFETs 296-41134-6-ND
N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5)

N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5)

Buy Now Datasheet
Single FETs, MOSFETs - 296-41134-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-41134-2-ND
Single FETs, MOSFETs 296-41134-2-ND
N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5)

N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5)

Buy Now Datasheet
Single FETs, MOSFETs - 296-41134-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-41134-1-ND
Single FETs, MOSFETs 296-41134-1-ND
N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5)

N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5)

Buy Now Datasheet
 - CSD13306WT - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 3.5A I(D), 12V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 3.5A I(D), 12V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
Singapore
N-Channel 10.2 mOhm MOSFET Transistor
278-CSD13306WT
N-Channel 10.2 mOhm MOSFET Transistor 278-CSD13306WT
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm 6-DSBGA -55 to 150 Product overview: CSD13306WT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 10.2 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10.2 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD13306WT can be used for catalog matching and distributor lookup.

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm 6-DSBGA -55 to 150 Product overview: CSD13306WT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 10.2 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10.2 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD13306WT can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD13306WT - 771855-CSD13306WT - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD13306WT
771855-CSD13306WT
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD13306WT 771855-CSD13306WT
Manufacturer: Texas Instruments Win Source Part Number: 771855-CSD13306WT Series: NexFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 6-UFBGA, DSBGA Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Family Name: CSD13306W Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Manufacturer Package: 6-DSBGA (1x1.5) Channel Type Type: N Drain Source Voltage: 12V Vgs(th) (Maximum) @ Id: 1.3V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 11.2nC @ 4.5V Input Capacitance (Ciss) (Maximum) @ Vds: 1370pF @ 6V Vgs (Maximum): ±10V Power Dissipation (Maximum): 1.9W (Ta) Rds On (Maximum) @ Id, Vgs: 10.2 mOhm @ 1.5A, 4.5V Alternative Parts (Cross-Reference): CSD13306W; Introduction Date: March 19, 2015 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited

Manufacturer: Texas Instruments
Win Source Part Number: 771855-CSD13306WT
Series: NexFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 6-UFBGA, DSBGA
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Family Name: CSD13306W
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Manufacturer Package: 6-DSBGA (1x1.5)
Channel Type Type: N
Drain Source Voltage: 12V
Vgs(th) (Maximum) @ Id: 1.3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 11.2nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds: 1370pF @ 6V
Vgs (Maximum): ±10V
Power Dissipation (Maximum): 1.9W (Ta)
Rds On (Maximum) @ Id, Vgs: 10.2 mOhm @ 1.5A, 4.5V
Alternative Parts (Cross-Reference): CSD13306W;
Introduction Date: March 19, 2015
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 12V N-Channel NexFET Power MOSFET

MOSFET 12V N-Channel NexFET Power MOSFET

Buy Now Datasheet
Single FETs, MOSFETs - CSD13306WT - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
CSD13306WT
Single FETs, MOSFETs CSD13306WT
MOSFET N-CH 12V 3.5A 6DSBGA

MOSFET N-CH 12V 3.5A 6DSBGA

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CSD13306WT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CSD13306WT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CSD13306WT
MOSFET N-CH 12V 3.5A 6DSBGA

MOSFET N-CH 12V 3.5A 6DSBGA

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 296-41134-6-ND CSD13306WT 278-CSD13306WT 771855-CSD13306WT CSD13306WT CSD13306WT CSD13306WT
Product Name Single FETs, MOSFETs N-Channel 10.2 mOhm MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD13306WT MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type 6-UFBGA, DSBGA DSBGA6 SOT3 6-UFBGA, DSBGA 6-UFBGA, DSBGA
rDS(on) 0.0155 ohms
Packing Method Tape Reel; Tape & Reel Tape Reel; Reel package Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
PD 1900 milliwatts 1900 milliwatts
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