Texas Instruments Standard Linear and Logic TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD13306WT CSD13306WT

Power Field-Effect Transistor, 3.5A I(D), 12V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer: Texas Instruments
Win Source Part Number: 771855-CSD13306WT
Series: NexFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 6-UFBGA, DSBGA
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Family Name: CSD13306W
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Manufacturer Package: 6-DSBGA (1x1.5)
Channel Type Type: N
Drain Source Voltage: 12V
Vgs(th) (Maximum) @ Id: 1.3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 11.2nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds: 1370pF @ 6V
Vgs (Maximum): ±10V
Power Dissipation (Maximum): 1.9W (Ta)
Rds On (Maximum) @ Id, Vgs: 10.2 mOhm @ 1.5A, 4.5V
Alternative Parts (Cross-Reference): CSD13306W;
Introduction Date: March 19, 2015
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited

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