N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)
N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)
N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)
12V, N ch NexFET MOSFET™, single WLP 1.0x1.0, 17.1mOhm 4-DSBGA -55 to 150 Product overview: CSD13302WT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 17.1mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 17.1mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD13302WT can be used for catalog matching and distributor lookup.
Manufacturer: Texas Instruments
Win Source Part Number: 1030581-CSD13302WT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-DSBGA (1x1)
Dimension: 4-UFBGA, DSBGA
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 1.6A (Ta)
Gate-Source Threshold Voltage: 1.3V @ 250μA
Max Gate Charge: 7.8nC @ 4.5V
Max Input Capacitance: 862pF @ 6V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 17.1 mOhm @ 1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Power Field-Effect Transistor, 1.6A I(D), 12V, 0.0258ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 12V, N ch NexFET MOSFETG , single WLP 1.0x1.0, 17.1mOhm 4-DSBGA -55 to 150
MOSFET N-CH 12V 1.6A 4DSBGA
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Rochester Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 296-CSD13302WTCT-ND | 278-CSD13302WT | 1030581-CSD13302WT | CSD13302WT | CSD13302WT | CSD13302WT |
| Product Name | Single FETs, MOSFETs | 12V 17.1mOhm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD13302WT | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | 4-UFBGA, DSBGA | SOT3; 4-DSBGA (1x1) | DSBGA4 | 4-UFBGA, DSBGA | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 12 volts |
