Texas Instruments High-Performance Analog TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD13302WT CSD13302WT

Description
Manufacturer: Texas Instruments Win Source Part Number: 1030581-CSD13302WT Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-DSBGA (1x1) Dimension: 4-UFBGA, DSBGA Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 1.6A (Ta) Gate-Source Threshold Voltage: 1.3V @ 250μA Max Gate Charge: 7.8nC @ 4.5V Max Input Capacitance: 862pF @ 6V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 17.1 mOhm @ 1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Texas Instruments Win Source Part Number: 1030581-CSD13302WT Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-DSBGA (1x1) Dimension: 4-UFBGA, DSBGA Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 1.6A (Ta) Gate-Source Threshold Voltage: 1.3V @ 250μA Max Gate Charge: 7.8nC @ 4.5V Max Input Capacitance: 862pF @ 6V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 17.1 mOhm @ 1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD13302WT - 1030581-CSD13302WT - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD13302WT
1030581-CSD13302WT
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD13302WT 1030581-CSD13302WT
Manufacturer: Texas Instruments Win Source Part Number: 1030581-CSD13302WT Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-DSBGA (1x1) Dimension: 4-UFBGA, DSBGA Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 1.6A (Ta) Gate-Source Threshold Voltage: 1.3V @ 250μA Max Gate Charge: 7.8nC @ 4.5V Max Input Capacitance: 862pF @ 6V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 17.1 mOhm @ 1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: Texas Instruments
Win Source Part Number: 1030581-CSD13302WT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-DSBGA (1x1)
Dimension: 4-UFBGA, DSBGA
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 1.6A (Ta)
Gate-Source Threshold Voltage: 1.3V @ 250μA
Max Gate Charge: 7.8nC @ 4.5V
Max Input Capacitance: 862pF @ 6V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 17.1 mOhm @ 1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 296-CSD13302WTCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-CSD13302WTCT-ND
Single FETs, MOSFETs 296-CSD13302WTCT-ND
N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)

N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)

Buy Now Datasheet
Single FETs, MOSFETs - 296-CSD13302WTDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-CSD13302WTDKR-ND
Single FETs, MOSFETs 296-CSD13302WTDKR-ND
N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)

N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)

Buy Now Datasheet
Single FETs, MOSFETs - 296-CSD13302WTTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-CSD13302WTTR-ND
Single FETs, MOSFETs 296-CSD13302WTTR-ND
N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)

N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)

Buy Now Datasheet
 - CSD13302WT - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 1.6A I(D), 12V, 0.0258ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 1.6A I(D), 12V, 0.0258ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CSD13302WT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CSD13302WT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CSD13302WT
MOSFET N-CH 12V 1.6A 4DSBGA

MOSFET N-CH 12V 1.6A 4DSBGA

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 12V, N ch NexFET MOSFETG , single WLP 1.0x1.0, 17.1mOhm 4-DSBGA -55 to 150

MOSFET 12V, N ch NexFET MOSFETG , single WLP 1.0x1.0, 17.1mOhm 4-DSBGA -55 to 150

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Rochester Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Power MOSFET Transistors Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1030581-CSD13302WT 296-CSD13302WTCT-ND CSD13302WT CSD13302WT CSD13302WT
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD13302WT Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 12 volts
QG 7.8 nC
PD 1800 milliwatts
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