Texas Instruments High-Performance Analog TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD13302WT CSD13302WT

Power Field-Effect Transistor, 1.6A I(D), 12V, 0.0258ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer: Texas Instruments
Win Source Part Number: 1030581-CSD13302WT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-DSBGA (1x1)
Dimension: 4-UFBGA, DSBGA
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 1.6A (Ta)
Gate-Source Threshold Voltage: 1.3V @ 250μA
Max Gate Charge: 7.8nC @ 4.5V
Max Input Capacitance: 862pF @ 6V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 17.1 mOhm @ 1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)

N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)

N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)