Texas Instruments High-Performance Analog 12V 17.1mOhm MOSFET Transistor CSD13302WT

Power Field-Effect Transistor, 1.6A I(D), 12V, 0.0258ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

12V, N ch NexFET MOSFET™, single WLP 1.0x1.0, 17.1mOhm 4-DSBGA -55 to 150 Product overview: CSD13302WT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 17.1mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 17.1mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD13302WT can be used for catalog matching and distributor lookup.

Manufacturer: Texas Instruments
Win Source Part Number: 1030581-CSD13302WT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-DSBGA (1x1)
Dimension: 4-UFBGA, DSBGA
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 1.6A (Ta)
Gate-Source Threshold Voltage: 1.3V @ 250μA
Max Gate Charge: 7.8nC @ 4.5V
Max Input Capacitance: 862pF @ 6V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 17.1 mOhm @ 1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)

N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)

N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)