Texas Instruments High-Performance Analog Single FETs, MOSFETs CSD13302W

Description
Power Field-Effect Transistor, 1.6A I(D), 12V, 0.0258ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Description
Power Field-Effect Transistor, 1.6A I(D), 12V, 0.0258ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - CSD13302W - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 1.6A I(D), 12V, 0.0258ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 1.6A I(D), 12V, 0.0258ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
Single FETs, MOSFETs - 296-48118-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-48118-2-ND
Single FETs, MOSFETs 296-48118-2-ND
N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)

N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)

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Single FETs, MOSFETs - 296-48118-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-48118-1-ND
Single FETs, MOSFETs 296-48118-1-ND
N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)

N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)

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Single FETs, MOSFETs - 296-48118-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-48118-6-ND
Single FETs, MOSFETs 296-48118-6-ND
N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)

N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)

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Singapore
N-Channel 17.1 mOhm MOSFET Transistor
278-CSD13302W
N-Channel 17.1 mOhm MOSFET Transistor 278-CSD13302W
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 17.1 mOhm 4-DSBGA Product overview: CSD13302W from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 17.1 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 17.1 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD13302W can be used for catalog matching and distributor lookup.

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 17.1 mOhm 4-DSBGA Product overview: CSD13302W from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 17.1 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 17.1 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD13302W can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1053422-CSD13302W - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1053422-CSD13302W
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1053422-CSD13302W
Win Source Part Number: 1053422-CSD13302W Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: NexFET™ Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 17.1mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Power Dissipation (Max): 1.8W (Ta) Package / Case: 4-UFBGA, DSBGA Supplier Device Package: 4-DSBGA (1x1) Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 862 pF @ 6 V Vgs (Max): ±10V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): SI1442DH-T1-GE3; SIA447DJ-T1-GE3; FDMA908PZ; DMP1022UFDE-7; DMP1022UFDF-7; MCH6336-TL-W; ECCN: EAR99 Fake Threat In the Open Market: 59 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Texas Instruments Other Names: CSD13302W-ND,2156-CS D13302W,TEXTISCSD133 02W,296-48118-6,296- 48118-1,296-48118-2 Base Product Number: CSD13302 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V

Win Source Part Number: 1053422-CSD13302W
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: NexFET™
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Package / Case: 4-UFBGA, DSBGA
Supplier Device Package: 4-DSBGA (1x1)
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 862 pF @ 6 V
Vgs (Max): ±10V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): SI1442DH-T1-GE3; SIA447DJ-T1-GE3; FDMA908PZ; DMP1022UFDE-7; DMP1022UFDF-7; MCH6336-TL-W;
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Texas Instruments
Other Names: CSD13302W-ND,2156-CSD13302W,TEXTISCSD13302W,296-48118-6,296-48118-1,296-48118-2
Base Product Number: CSD13302
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 12V, N ch NexFET MOSFETG , single WLP 1.0x1.0, 17.1mOhm 4-DSBGA

MOSFET 12V, N ch NexFET MOSFETG , single WLP 1.0x1.0, 17.1mOhm 4-DSBGA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CSD13302W - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CSD13302W
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CSD13302W
MOSFET N-CH 12V 1.6A 4DSBGA

MOSFET N-CH 12V 1.6A 4DSBGA

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number CSD13302W 296-48118-2-ND 278-CSD13302W 1053422-CSD13302W CSD13302W CSD13302W
Product Name Single FETs, MOSFETs N-Channel 17.1 mOhm MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
rDS(on) 0.0258 ohms
Package Type DSBGA4 4-UFBGA, DSBGA SOT3 4-UFBGA, DSBGA
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