Texas Instruments High-Performance Analog N-Channel 17.1 mOhm MOSFET Transistor CSD13302W

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 17.1 mOhm 4-DSBGA Product overview: CSD13302W from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 17.1 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 17.1 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD13302W can be used for catalog matching and distributor lookup.

Win Source Part Number: 1053422-CSD13302W
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: NexFET™
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Package / Case: 4-UFBGA, DSBGA
Supplier Device Package: 4-DSBGA (1x1)
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 862 pF @ 6 V
Vgs (Max): ±10V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): SI1442DH-T1-GE3; SIA447DJ-T1-GE3; FDMA908PZ; DMP1022UFDE-7; DMP1022UFDF-7; MCH6336-TL-W;
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Texas Instruments
Other Names: CSD13302W-ND,2156-CSD13302W,TEXTISCSD13302W,296-48118-6,296-48118-1,296-48118-2
Base Product Number: CSD13302
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V

Power Field-Effect Transistor, 1.6A I(D), 12V, 0.0258ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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