Texas Instruments CSD13202Q2 N-Channel Power MOSFET, CSD13202Q2, 12V Vds, 9.3mohm Rdson4.5 (max) CSD13202Q2

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CSD13202Q2 N-Channel Power MOSFET, CSD13202Q2, 12V Vds, 9.3mohm Rdson4.5 (max) - CSD13202Q2 - Texas Instruments
Dallas, TX, United States
CSD13202Q2 N-Channel Power MOSFET, CSD13202Q2, 12V Vds, 9.3mohm Rdson4.5 (max) CSD13202Q2
N-Channel Power MOSFET, CSD13202Q2, 12V Vds, 9.3mohm Rdson4.5 (max) 6-WSON -55 to 150

N-Channel Power MOSFET, CSD13202Q2, 12V Vds, 9.3mohm Rdson4.5 (max) 6-WSON -55 to 150

Supplier's Site Datasheet
Transistors - FETs, MOSFETs - Single - 296-38911-1-ND - Digi-Key Electronics
Thief River Falls, MN, USA
Transistors - FETs, MOSFETs - Single 296-38911-1-ND
MOSFET N-CH 12V 22A 6WSON

MOSFET N-CH 12V 22A 6WSON

Supplier's Site Datasheet
Transistors - FETs, MOSFETs - Single - 296-38911-2-ND - Digi-Key Electronics
Thief River Falls, MN, USA
Transistors - FETs, MOSFETs - Single 296-38911-2-ND
MOSFET N-CH 12V 22A 6WSON

MOSFET N-CH 12V 22A 6WSON

Supplier's Site Datasheet
Transistors - FETs, MOSFETs - Single - 296-38911-6-ND - Digi-Key Electronics
Thief River Falls, MN, USA
Transistors - FETs, MOSFETs - Single 296-38911-6-ND
MOSFET N-CH 12V 22A 6WSON

MOSFET N-CH 12V 22A 6WSON

Supplier's Site Datasheet
FETs - Single - CSD13202Q2 - 801062-CSD13202Q2 - Win Source Electronics
Shenzhen, Guangdong, China
FETs - Single - CSD13202Q2 801062-CSD13202Q2
Manufacturer: Texas Instruments Packaging: Reel FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) at 25°C: 22A Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Maximum) at Id, Vgs: 9.3mOhm at 5A, 4.5V Vgs(th) (Maximum) at Id: 1.1V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 6.6nC at 4.5V Maximum Vgs: ±8V Input Capacitance (Ciss) (Maximum) at Vds: 997pF at 6V Power Dissipation (Maximum): 2.7W Temperature Range - Operating: -55°C ~ 150°C Mounting Style: SMD Supplier Device Package: 6-WSON (2x2) Manufacturer Package: 6-VDFN Exposed Pad Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Popularity: High Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Sufficient Win Source Part Number: 801062-CSD13202Q2

Manufacturer: Texas Instruments
Packaging: Reel
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) at 25°C: 22A
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Maximum) at Id, Vgs: 9.3mOhm at 5A, 4.5V
Vgs(th) (Maximum) at Id: 1.1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 6.6nC at 4.5V
Maximum Vgs: ±8V
Input Capacitance (Ciss) (Maximum) at Vds: 997pF at 6V
Power Dissipation (Maximum): 2.7W
Temperature Range - Operating: -55°C ~ 150°C
Mounting Style: SMD
Supplier Device Package: 6-WSON (2x2)
Manufacturer Package: 6-VDFN Exposed Pad
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient
Win Source Part Number: 801062-CSD13202Q2

Supplier's Site

Technical Specifications

  Texas Instruments Digi-Key Electronics Digi-Key Electronics Win Source Electronics
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET
Product Number CSD13202Q2 296-38911-1-ND 296-38911-2-ND 801062-CSD13202Q2
Product Name CSD13202Q2 N-Channel Power MOSFET, CSD13202Q2, 12V Vds, 9.3mohm Rdson4.5 (max) Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single FETs - Single - CSD13202Q2
Package Type SON2x2 6-WDFN Exposed Pad 6-WDFN Exposed Pad SOT3
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
IDSS 76000 milliamps
VGS(off) 1.1 volts 1.1 volts
V(BR)DSS 12 volts
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