N-Channel Power MOSFET, CSD13202Q2, 12V Vds, 9.3mohm Rdson4.5 (max) 6-WSON -55 to 150
12V, N ch NexFET MOSFET™, single SON2x2, 9.3mOhm 6-WSON -55 to 150 Product overview: CSD13202Q2 from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 9.3mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 9.3mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD13202Q2 can be used for catalog matching and distributor lookup.
Manufacturer: Texas Instruments
Win Source Part Number: 801062-CSD13202Q2
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 12V
Supplier Device Package: 6-WSON (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 6-VDFN Exposed Pad
Power Dissipation (Maximum): 2.7W
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 9.3mOhm at 5A, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 6.6nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 997pF at 6V
Current - Continuous Drain (Id) at 25°C: 22A
Vgs(th) (Maximum) at Id: 1.1V at 250μA
Maximum Vgs: ±8V
MOSFET N-CH 12V 22A 6WSON
N-Channel 12V 22A (Ta) 2.7W (Ta) Surface Mount 6-WSON (2x2)
N-Channel 12V 22A (Ta) 2.7W (Ta) Surface Mount 6-WSON (2x2)
N-Channel 12V 22A (Ta) 2.7W (Ta) Surface Mount 6-WSON (2x2)
MOSFET N-CH Power MOSFET 12V 9.3mohm
MOSFET, N-CH, 12V, 22A, WSON-6; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; Power RoHS Compliant: Yes
MOSFET N-CH 12V 22A 6WSON
| Texas Instruments | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | CSD13202Q2 | 278-CSD13202Q2 | 801062-CSD13202Q2 | CSD13202Q2 | 296-38911-2-ND | CSD13202Q2 | 29AH3821 | CSD13202Q2 |
| Product Name | CSD13202Q2 N-Channel Power MOSFET, CSD13202Q2, 12V Vds, 9.3mohm Rdson4.5 (max) | 12V 9.3mOhm MOSFET Transistor | FETs - Single - CSD13202Q2 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 12V, 22A, Wson-6; Transistor Polarity Texas Instruments | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| V(BR)DSS | 12 volts | 12 volts | ||||||
| rDS(on) | 0.0093 ohms | 0.0075 ohms | ||||||
| IDSS | 76000 milliamps | 22000 milliamps | 22000 milliamps | |||||
| QG | 5.1 nC | 6.6 nC |
