Texas Instruments High-Performance Analog Integrated Circuits (ICs) - Memory - Memory BQ4011YMA-70

Description
Non-Volatile SRAM Module, 32KX8, 70ns, PDMA28
Request a Quote Datasheet
Description
Non-Volatile SRAM Module, 32KX8, 70ns, PDMA28
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - BQ4011YMA-70 - Rochester Electronics
Newburyport, MA, United States
Non-Volatile SRAM Module, 32KX8, 70ns, PDMA28

Non-Volatile SRAM Module, 32KX8, 70ns, PDMA28

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 1378002-BQ4011YMA-70 - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory - Memory
1378002-BQ4011YMA-70
Integrated Circuits (ICs) - Memory - Memory 1378002-BQ4011YMA-70
Win Source Part Number: 1378002-BQ4011YMA-70 Category: Integrated Circuits (ICs) - Memory - Memory Temperature Range - Operating: 0°C ~ 70°C (TA) Fake Threat In the Open Market: 38 pct. MSL Level: 1 (Unlimited) Mfr: Texas Instruments Package: Tube Product Status: Obsolete Package / Case: 28-DIP Module (0.61", 15.49mm) Supplier Device Package: 28-DIP Module (18.42x37.72) Base Product Number: BQ4011 Technology: NVSRAM (Non-Volatile SRAM) Mounting Type: Through Hole HTSUS: 8542.32.0041 REACH Status: REACH Unaffected ECCN: EAR99 Voltage - Supply: 4.5V ~ 5.5V Memory Type: Non-Volatile Memory Format: NVSRAM Memory Size: 256Kbit Memory Organization: 32K x 8 Memory Interface: Parallel Write Cycle Time - Word, Page: 70ns Access Time: 70 ns

Win Source Part Number: 1378002-BQ4011YMA-70
Category: Integrated Circuits (ICs) - Memory - Memory
Temperature Range - Operating: 0°C ~ 70°C (TA)
Fake Threat In the Open Market: 38 pct.
MSL Level: 1 (Unlimited)
Mfr: Texas Instruments
Package: Tube
Product Status: Obsolete
Package / Case: 28-DIP Module (0.61", 15.49mm)
Supplier Device Package: 28-DIP Module (18.42x37.72)
Base Product Number: BQ4011
Technology: NVSRAM (Non-Volatile SRAM)
Mounting Type: Through Hole
HTSUS: 8542.32.0041
REACH Status: REACH Unaffected
ECCN: EAR99
Voltage - Supply: 4.5V ~ 5.5V
Memory Type: Non-Volatile
Memory Format: NVSRAM
Memory Size: 256Kbit
Memory Organization: 32K x 8
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Access Time: 70 ns

Buy Now Datasheet
Memory - 296-9393-5-ND - DigiKey
Thief River Falls, MN, United States
NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 70ns 28-DIP Module (18.42x37.72)

NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 70ns 28-DIP Module (18.42x37.72)

Buy Now Datasheet
5V DIP Memory IC and Storage Component - 774-BQ4011YMA-70 - ERSAELECTRONICS PTE. LTD.
Singapore
5V DIP Memory IC and Storage Component
774-BQ4011YMA-70
5V DIP Memory IC and Storage Component 774-BQ4011YMA-70
NVRAM NVSRAM Parallel 256Kbit 5V 28-Pin DIP Module Product overview: BQ4011YMA-70 from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5V, DIP. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 5V, DIP, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4011YMA-70 can be used for catalog matching and distributor lookup.

NVRAM NVSRAM Parallel 256Kbit 5V 28-Pin DIP Module Product overview: BQ4011YMA-70 from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5V, DIP. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 5V, DIP, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4011YMA-70 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - BQ4011YMA-70 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
NVSRAM (Non-Volatile SRAM) Memory IC 256Kbit Parallel 70 ns 28-DIP Module (18.42x37.72)

NVSRAM (Non-Volatile SRAM) Memory IC 256Kbit Parallel 70 ns 28-DIP Module (18.42x37.72)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - BQ4011YMA-70 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
BQ4011YMA-70
Integrated Circuits (ICs) - Memory - Memory BQ4011YMA-70
IC NVSRAM 256KBIT PARALLEL 28DIP

IC NVSRAM 256KBIT PARALLEL 28DIP

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number BQ4011YMA-70 1378002-BQ4011YMA-70 296-9393-5-ND 774-BQ4011YMA-70 BQ4011YMA-70 BQ4011YMA-70
Product Name Integrated Circuits (ICs) - Memory - Memory Memory 5V DIP Memory IC and Storage Component Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip Non-Volatile; SRAM Chip NVRAM; NVSRAM NVRAM; NVSRAM; Non-Volatile, , NVSRAM; SRAM Chip NVSRAM; NVSRAM; SRAM Chip Non-Volatile; SRAM Chip
Package Type DIP; DIP28 DIP DIP; "28-DIP Module (0.61"", 15.49mm)" Module DIP; 28-DIP Module (0.61\", 15.49mm)
Access Time 70 ns 70 ns 70 ns
Cycle Time 70 ns 70 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 C (32 F) 0 to 70 C (32 to 158 F)
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