The BQ4011MA-100 is a non-volatile static RAM (NVSRAM) memory device from Quarktwin Technology Ltd., featuring a capacity of 256Kbits organized as 32,768 words by 8 bits. It operates at supply voltages of either 5V or 3.3V and is housed in a standard 28-pin DIP package. This memory device is designed for applications requiring data retention for at least 10 years without power, utilizing an integral lithium energy source for non-volatility. The BQ4011MA-100 supports unlimited write cycles typical of conventional SRAM, while also incorporating automatic write protection during power-up and power-down cycles to prevent data corruption. The device features low standby current consumption and does not require external circuitry, making it compatible with existing 256Kb SRAM pinouts. It is suitable for use in various applications where reliable data retention and fast access times are critical.
256Kb NVSRAM 32Kx8 100ns Parallel PDIP Product overview: BQ4011MA-100 from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 256Kb. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 256Kb, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4011MA-100 can be used for catalog matching and distributor lookup.
Manufacturer: Texas Instruments
Win Source Part Number: 1154325-BQ4011MA-100
Packaging: Tray
Mounting Style: Through Hole
Operating Temperature Range: 0°C ~ 70°C (TA)
Package: 28-DIP Module (0.61", 15.49mm)
Technology: NVSRAM (Non-Volatile SRAM)
Operating Supply Voltage: 4.75 V ~ 5.5 V
Memory Type: Non-Volatile
Memory Size: 256Kb (32K x 8)
Access Time: 100ns
Part Status: Obsolete(EOL)
Family Name: bq4011
Categories: Integrated Circuits (ICs)
Memory Format: NVSRAM
Manufacturer Homepage: www.ti.com
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Manufacturer Package: 28-DIP Module (18.42x37.72)
Alternative Parts (Cross-Reference): M48Z35-70PC6 ; M48Z35-70PC1; M48Z35-70PC1TR;
Introduction Date: November 01, 2006
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 100ns 28-DIP Module (18.42x37.72)
IC NVSRAM 256KBIT PARALLEL 28DIP
IC NVSRAM 256KBIT PARALLEL 28DIP
NVSRAM (Non-Volatile SRAM) Memory IC 256Kbit Parallel 100 ns 28-DIP Module (18.42x37.72)
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-BQ4011MA-100 | 1154325-BQ4011MA-100 | 296-9391-5-ND | BQ4011MA-100 | BQ4011MA-100 | BQ4011MA-100 |
| Product Name | 256Kb Memory IC and Storage Component | Memory - SRAM - BQ4011MA-100 | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | NVSRAM; Non-Volatile, , NVSRAM; SRAM Chip | Non-Volatile | NVRAM; NVSRAM | Non-Volatile; SRAM Chip | NVSRAM; SRAM Chip | NVSRAM; NVSRAM; SRAM Chip |
| Access Time | 100 ns | 100 ns | 100 ns | 100 ns | ||
| Operating Temperature | 0 C (32 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Density | 256 kbits | 256 kbits | 256 kbits | 256 kbits | ||
| Address Bus Width | 8 bits |
