Texas Instruments High-Performance Analog Memory BQ4010YMA-150N

Description
NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 150ns 28-DIP Module (18.42x37.72)
Request a Quote Datasheet
Description
NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 150ns 28-DIP Module (18.42x37.72)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 296-32843-5-ND - DigiKey
Thief River Falls, MN, United States
NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 150ns 28-DIP Module (18.42x37.72)

NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 150ns 28-DIP Module (18.42x37.72)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - BQ4010YMA-150N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
BQ4010YMA-150N
Integrated Circuits (ICs) - Memory - Memory BQ4010YMA-150N
IC NVSRAM 64KBIT PARALLEL 28DIP

IC NVSRAM 64KBIT PARALLEL 28DIP

Supplier's Site
Memory - BQ4010YMA-150N - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 150 ns 28-DIP Module (18.42x37.72)

NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 150 ns 28-DIP Module (18.42x37.72)

Buy Now Datasheet
IC NVSRAM 64KBIT PARALLEL 28DIP

IC NVSRAM 64KBIT PARALLEL 28DIP

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 296-32843-5-ND BQ4010YMA-150N BQ4010YMA-150N BQ4010YMA-150N
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category NVRAM; NVSRAM Non-Volatile; SRAM Chip NVSRAM; NVSRAM; SRAM Chip NVSRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type DIP; "28-DIP Module (0.61"", 15.49mm)" DIP; 28-DIP Module (0.61\", 15.49mm)
Supply Voltage 4.5V ~ 5.5V Through Hole 4.5V ~ 5.5V
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