NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 200ns 28-DIP Module (18.42x37.72)
8KX8 NON-VOLATILE SRAM MODULE, 200ns, DMA28, DIP-28 Product overview: BQ4010MA-200 from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include DIP. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, DIP, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4010MA-200 can be used for catalog matching and distributor lookup.
IC NVSRAM 64KBIT PARALLEL 28DIP
NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 200 ns 28-DIP Module (18.42x37.72)
NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 200 ns 28-DIP Module (18.42x37.72)
| DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | BQ4010MA-200-ND | 774-BQ4010MA-200 | BQ4010MA-200 | BQ4010MA-200 |
| Product Name | Memory | DIP Memory IC and Storage Component | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | NVRAM; NVSRAM | NVSRAM; Non-Volatile, , NVSRAM; SRAM Chip | Non-Volatile; SRAM Chip | NVSRAM; NVSRAM; SRAM Chip |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 C (32 F) | 0 to 70 C (32 to 158 F) | |
| Package Type | DIP; "28-DIP Module (0.61"", 15.49mm)" | DIP; 28-DIP Module (0.61\", 15.49mm) | ||
| Supply Voltage | 4.75V ~ 5.5V | 4.75V | Through Hole | 4.75V ~ 5.5V |
| Access Time | 200 ns | 200 ns |
