Texas Instruments Memory 27C512AE200/883C

Description
EPROM - OTP Memory IC 512Kbit Parallel 200 ns
Datasheet
Description
EPROM - OTP Memory IC 512Kbit Parallel 200 ns
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 27C512AE200/883C - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EPROM - OTP Memory IC 512Kbit Parallel 200 ns

EPROM - OTP Memory IC 512Kbit Parallel 200 ns

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
27C512AE200/883C
Integrated Circuits (ICs) - Memory - Memory 27C512AE200/883C
IC EPROM 512KBIT PARALLEL

IC EPROM 512KBIT PARALLEL

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number 27C512AE200/883C 27C512AE200/883C
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category EPROM; EPROM EPROM; Non-Volatile
Access Time 200 ns
Operating Temperature -40 to 125 C (-40 to 257 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS29F040 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - CY7C266-25WC - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 25 ns
Density 64 kbits
View Details
Memory - 4721BDC - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category RAM
Operating Temperature 0 to 70 C (32 to 158 F)
Density 1 kbits
View Details
Flash Memory - 1882679P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 128000 kbits
Package Type WSON
View Details