EPCOS AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single EPC2040

Description
Manufacturer: EPC Win Source Part Number: 1324536-EPC2040 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Reel - TR Standard Package: 2,500 Mounting: Surface Mount Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Drain to Source Voltage (Vdss): 15 V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 30mOhm @ 1.5A, 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: Die Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 6 V Temperature Range - Operating: -40°C ~ 150°C (TJ) Case / Package: Die ECCN: EAR99 Fake Threat In the Open Market: 70 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: 917-1153-6,917-1153- 2,917-1153-1 Base Product Number: EPC20 Drive Voltage (Max Rds On, Min Rds On): 5V RoHS Status: ROHS3 Compliant
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Description
Manufacturer: EPC Win Source Part Number: 1324536-EPC2040 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Reel - TR Standard Package: 2,500 Mounting: Surface Mount Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Drain to Source Voltage (Vdss): 15 V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 30mOhm @ 1.5A, 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: Die Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 6 V Temperature Range - Operating: -40°C ~ 150°C (TJ) Case / Package: Die ECCN: EAR99 Fake Threat In the Open Market: 70 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: 917-1153-6,917-1153- 2,917-1153-1 Base Product Number: EPC20 Drive Voltage (Max Rds On, Min Rds On): 5V RoHS Status: ROHS3 Compliant
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Datasheet
Datasheet Summary
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The EPC2040 is a gallium nitride (GaN) enhancement-mode power FET designed for high-frequency switching applications such as DC-DC conversion and lidar systems. It is supplied as a bare die with solder bumps in a passivated form, featuring a die size of 0.85 x 1.2 mm. The device has a continuous drain-to-source voltage rating of 15 V, a drain current capability of 3.4 A at 25°C, and a maximum on-state resistance of 30 mΩ at 1.5 A and 5 V gate-source voltage. It operates over a junction temperature range of -40°C to 150°C and meets MSL 1 moisture sensitivity classification. The FET complies with RoHS standards and features ultra-low gate charge (925 pC maximum) and zero reverse recovery charge.

Datasheet Summary
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The EPC2040 is a gallium nitride (GaN) enhancement-mode power FET designed for high-frequency switching applications such as DC-DC conversion and lidar systems. It is supplied as a bare die with solder bumps in a passivated form, featuring a die size of 0.85 x 1.2 mm. The device has a continuous drain-to-source voltage rating of 15 V, a drain current capability of 3.4 A at 25°C, and a maximum on-state resistance of 30 mΩ at 1.5 A and 5 V gate-source voltage. It operates over a junction temperature range of -40°C to 150°C and meets MSL 1 moisture sensitivity classification. The FET complies with RoHS standards and features ultra-low gate charge (925 pC maximum) and zero reverse recovery charge.

Suppliers

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Product
Description
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324536-EPC2040 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324536-EPC2040
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324536-EPC2040
Manufacturer: EPC Win Source Part Number: 1324536-EPC2040 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Reel - TR Standard Package: 2,500 Mounting: Surface Mount Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Drain to Source Voltage (Vdss): 15 V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 30mOhm @ 1.5A, 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: Die Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 6 V Temperature Range - Operating: -40°C ~ 150°C (TJ) Case / Package: Die ECCN: EAR99 Fake Threat In the Open Market: 70 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: 917-1153-6,917-1153- 2,917-1153-1 Base Product Number: EPC20 Drive Voltage (Max Rds On, Min Rds On): 5V RoHS Status: ROHS3 Compliant

Manufacturer: EPC
Win Source Part Number: 1324536-EPC2040
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Reel - TR
Standard Package: 2,500
Mounting: Surface Mount
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 15 V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 30mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 6 V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Case / Package: Die
ECCN: EAR99
Fake Threat In the Open Market: 70
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 917-1153-6,917-1153-2,917-1153-1
Base Product Number: EPC20
Drive Voltage (Max Rds On, Min Rds On): 5V
RoHS Status: ROHS3 Compliant

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1324536-EPC2040
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Polarity N-Channel
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