2DDxxxxxxC series are insulated DC/DC converters for gate drivers such as SiC MOSFET and IGBT. The high breakdown voltage and low parasitic capacitance make it suitable for gate drives such as SiC MOSFET and IGBT.
Features
Ideal for gate drive power supply
Ideal for half-bridge operation by dual output
Gate voltage: +18V/-4V
Low parasitic capacitance (about 9 pF); highly resistant to common-mode noise.
Input-to-Output dielectric withstand voltage : AC5000V
Output-to-Output dielectric withstand voltage : AC4000V
Input-to-Output insulation distance : 14mm (clearance creepage）
Output-to-Output insulation distance : 12mm (clearance creepage）
Input voltage : 13.5 to 26.4V
Over load protection
Over heat protection
Filling structure
Safety standards：UL508(file no.E243511)
Applications
Inverters for industrial equipment, power conditioners, etc.
2DDxxxxxxC series are insulated DC/DC converters for gate drivers such as SiC MOSFET and IGBT. The high breakdown voltage and low parasitic capacitance make it suitable for gate drives such as SiC MOSFET and IGBT.
Features
- Ideal for gate drive power supply
- Ideal for half-bridge operation by dual output
- Gate voltage: +18V/-4V
- Low parasitic capacitance (about 9 pF); highly resistant to common-mode noise.
- Input-to-Output dielectric withstand voltage : AC5000V
- Output-to-Output dielectric withstand voltage : AC4000V
- Input-to-Output insulation distance : 14mm (clearance creepage）
- Output-to-Output insulation distance : 12mm (clearance creepage）
- Input voltage : 13.5 to 26.4V
- Over load protection
- Over heat protection
- Filling structure
- Safety standards：UL508(file no.E243511)
Applications
Inverters for industrial equipment, power conditioners, etc.
