Taizhou Electronics Co., Ltd. Transistors TPM3416ES3L

Description
SOT-23 MOSFETs ROHS
  • Transistors - TPM3416ES3L - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
SOT-23 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - TPM3416ES3L - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
TPM3416ES3L
Transistors TPM3416ES3L
SOT-23 MOSFETs ROHS

SOT-23 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number TPM3416ES3L
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Bipolar Transistors - BJT - 2N3799 - Micross Components, Inc.
Micross Components, Inc.
Bipolar Transistors - BJT
2N3799
View Details
DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor - T1G4020036-FL - Qorvo
Qorvo
DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor
T1G4020036-FL
Specs
Transistor Technology / Material DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor
Package Type NI-650 Flanged
View Details
2 suppliers
Transistor - 343728 - Radwell International
Allen-Bradley / Rockwell Automation
Transistor
1336-QOUT-SP12A
View Details
Igbt, Module, Dual N Channel, 1.2Kv, 1.2Ka; Continuous Collector Current Fuji Electric - 54W0215 - Newark, An Avnet Company
Fuji Electric Corp. of America
Igbt, Module, Dual N Channel, 1.2Kv, 1.2Ka; Continuous Collector Current Fuji Electric
2MBI900VXA-120P-50
Specs
Transistor Type IGBT
Polarity N-Channel
Package Type TO-3
View Details