Taizhou Electronics Co., Ltd. Transistors TPM2008EP3

Description
20V 700mA 130mΩ@4.5V,650mA 100mW 750mV@250uA 1 N-Channel DFN1006-3L MOSFETs ROHS
  • Transistors - TPM2008EP3 - ODG (Origin Data Global)
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Description
20V 700mA 130mΩ@4.5V,650mA 100mW 750mV@250uA 1 N-Channel DFN1006-3L MOSFETs ROHS
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Transistors - TPM2008EP3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
TPM2008EP3
Transistors TPM2008EP3
20V 700mA 130mΩ@4.5V,650mA 100mW 750mV@250uA 1 N-Channel DFN1006-3L MOSFETs ROHS

20V 700mA 130mΩ@4.5V,650mA 100mW 750mV@250uA 1 N-Channel DFN1006-3L MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number TPM2008EP3
Product Name Transistors
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