Taizhou Electronics Co., Ltd. Transistors TP5001P3

Description
50V 100mW 120@2mA,6V 100mA NPN DFN-3(1x0.6) Bipolar (BJT) ROHS
  • Transistors - TP5001P3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
50V 100mW 120@2mA,6V 100mA NPN DFN-3(1x0.6) Bipolar (BJT) ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - TP5001P3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
TP5001P3
Transistors TP5001P3
50V 100mW 120@2mA,6V 100mA NPN DFN-3(1x0.6) Bipolar (BJT) ROHS

50V 100mW 120@2mA,6V 100mA NPN DFN-3(1x0.6) Bipolar (BJT) ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number TP5001P3
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Hard To Find - 2MBI800U4G-120 - 1123628-2MBI800U4G-120 - Win Source Electronics
Fuji Electric Corp. of America
Hard To Find - 2MBI800U4G-120
2MBI800U4G-120
Specs
Transistor Type IGBT
Package Type SOT3
View Details
2 suppliers
Single Bipolar Transistors - 1727-BC817-25QCZCT-ND - DigiKey
Nexperia B.V.
Single Bipolar Transistors
BC817-25QCZ
Specs
Polarity NPN
Package Type 3-XDFN Exposed Pad
Transistor Grade / Operating Range Automotive
View Details
4 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMZA75R008M1H - AIMZA75R008M1H - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMZA75R008M1H
AIMZA75R008M1H
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
1450A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-D1K4 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
1450A IGBT MODULE FOR ONE PHASE
SK-H1-QOUT-D1K4
Specs
Transistor Type IGBT
View Details