Taiwan Semiconductor Co., Ltd. Single FETs, MOSFETs TSM60NE048PW C0G

The TSM60NE048PW is an N-channel power MOSFET using super-junction technology, designed for high-voltage switching applications such as motor drivers and industrial systems. It is packaged in a TO-247 case with a maximum drain-source voltage of 600 V, a continuous drain current of 61 A at 25 °C, and a drain-source on-state resistance of 48 mΩ maximum at 10 V gate-source voltage. The device has a total gate charge of 114 nC, a junction-to-case thermal resistance of 0.29 °C/W, and an operating junction and storage temperature range of -55 °C to +150 °C. It is RoHS compliant and halogen-free.