Taiwan Semiconductor Co., Ltd. Single FETs, MOSFETs TSM1N45DCS RLG

TSM1N45DCS RLG is a dual N-channel 450V power MOSFET in an SOP-8 package, designed for electronic ballast and half-bridge applications. Each channel has a continuous drain current of 0.5 A, a drain-source on-resistance of 4.25 Ω at VGS=10V, and a pulsed drain current of 4 A. The device features a gate-source voltage rating of ±50 V, an avalanche energy of 108 mJ, and a maximum power dissipation of 0.9 W at Ta=25°C. Thermal resistance from junction to ambient is 80°C/W. The SOP-8 package measures 5.80-6.20 mm in body length and 4.80-5.00 mm in width. The part is RoHS-compliant and halogen-free, with operating junction and storage temperatures from -55°C to +150°C.