Taiwan Semiconductor Co., Ltd. Single Bipolar Transistors BC549C A1G

Description
Bipolar (BJT) Transistor NPN 30V 100mA 500mW Through Hole TO-92
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Description
Bipolar (BJT) Transistor NPN 30V 100mA 500mW Through Hole TO-92
Request a Quote
Datasheet
Datasheet Summary
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NPN silicon transistor in TO-92 package for switching and amplification applications, rated for 30V collector-emitter voltage, 100mA collector current, and 500mW power dissipation, with DC current gain (hFE) between 420 and 800. The device complies with RoHS standards and meets UL 94 V-0 flammability rating. Packaging is TO-92 in ammo box format with matte tin plated leads.

Datasheet Summary
Powered by GS/AI

NPN silicon transistor in TO-92 package for switching and amplification applications, rated for 30V collector-emitter voltage, 100mA collector current, and 500mW power dissipation, with DC current gain (hFE) between 420 and 800. The device complies with RoHS standards and meets UL 94 V-0 flammability rating. Packaging is TO-92 in ammo box format with matte tin plated leads.

Suppliers

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Single Bipolar Transistors - BC549CA1G-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BC549CA1G-ND
Single Bipolar Transistors BC549CA1G-ND
Bipolar (BJT) Transistor NPN 30V 100mA 500mW Through Hole TO-92

Bipolar (BJT) Transistor NPN 30V 100mA 500mW Through Hole TO-92

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number BC549CA1G-ND
Product Name Single Bipolar Transistors
Polarity NPN
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