Taiwan Semiconductor Co., Ltd. Single Bipolar Transistors BC338-40 A1G

Description
Bipolar (BJT) Transistor NPN 25V 800mA 100MHz 625mW Through Hole TO-92
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Description
Bipolar (BJT) Transistor NPN 25V 800mA 100MHz 625mW Through Hole TO-92
Request a Quote
Datasheet
Datasheet Summary
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NPN silicon transistor for switching and audio frequency amplifier applications, in a TO-92 plastic package, with a 25V collector-emitter voltage, 800mA continuous collector current, 625mW power dissipation, and DC current gain between 250 and 630 for the -40 gain group, rated for junction and storage temperatures from -55°C to +150°C, lead-free and RoHS compliant with green compound.

Datasheet Summary
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NPN silicon transistor for switching and audio frequency amplifier applications, in a TO-92 plastic package, with a 25V collector-emitter voltage, 800mA continuous collector current, 625mW power dissipation, and DC current gain between 250 and 630 for the -40 gain group, rated for junction and storage temperatures from -55°C to +150°C, lead-free and RoHS compliant with green compound.

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Single Bipolar Transistors - BC338-40A1G-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BC338-40A1G-ND
Single Bipolar Transistors BC338-40A1G-ND
Bipolar (BJT) Transistor NPN 25V 800mA 100MHz 625mW Through Hole TO-92

Bipolar (BJT) Transistor NPN 25V 800mA 100MHz 625mW Through Hole TO-92

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number BC338-40A1G-ND
Product Name Single Bipolar Transistors
Polarity NPN
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