Taiwan Semiconductor Co., Ltd. Single Bipolar Transistors BC337-25 B1G

Description
Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 625mW Through Hole TO-92
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Description
Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 625mW Through Hole TO-92
Request a Quote
Datasheet
Datasheet Summary
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NPN silicon transistor for switching and audio frequency amplifier applications, housed in a TO-92 small outline plastic package, weighing approximately 190 mg, with a maximum collector current of 800 mA, power dissipation of 625 mW, collector-emitter voltage of 45 V, and collector-base voltage of 50 V. It features a DC current gain (hFE) range of 160 to 400 at 100 mA collector current and 5 V collector-emitter voltage. The device is RoHS compliant, uses a green compound (halogen-free), and has a junction and storage temperature range of -55°C to +150°C.

Datasheet Summary
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NPN silicon transistor for switching and audio frequency amplifier applications, housed in a TO-92 small outline plastic package, weighing approximately 190 mg, with a maximum collector current of 800 mA, power dissipation of 625 mW, collector-emitter voltage of 45 V, and collector-base voltage of 50 V. It features a DC current gain (hFE) range of 160 to 400 at 100 mA collector current and 5 V collector-emitter voltage. The device is RoHS compliant, uses a green compound (halogen-free), and has a junction and storage temperature range of -55°C to +150°C.

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Single Bipolar Transistors - BC337-25B1G-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BC337-25B1G-ND
Single Bipolar Transistors BC337-25B1G-ND
Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 625mW Through Hole TO-92

Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 625mW Through Hole TO-92

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number BC337-25B1G-ND
Product Name Single Bipolar Transistors
Polarity NPN
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