Taiwan Semiconductor Manufacturing Company, Ltd. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs TSM60NB600CF

Description
Win Source Part Number: 1380171-TSM60NB600CF Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 43 pct. Mfr: Taiwan Semiconductor Corporation Package: Tube Product Status: Active Package / Case: TO-220-3 Full Pack Supplier Device Package: ITO-220S Base Product Number: TSM60 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 100 V Power Dissipation (Max): 41.7W (Tc) Mounting Type: Through Hole HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99
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Description
Win Source Part Number: 1380171-TSM60NB600CF Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 43 pct. Mfr: Taiwan Semiconductor Corporation Package: Tube Product Status: Active Package / Case: TO-220-3 Full Pack Supplier Device Package: ITO-220S Base Product Number: TSM60 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 100 V Power Dissipation (Max): 41.7W (Tc) Mounting Type: Through Hole HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99
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Suppliers

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Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1380171-TSM60NB600CF - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1380171-TSM60NB600CF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1380171-TSM60NB600CF
Win Source Part Number: 1380171-TSM60NB600CF Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 43 pct. Mfr: Taiwan Semiconductor Corporation Package: Tube Product Status: Active Package / Case: TO-220-3 Full Pack Supplier Device Package: ITO-220S Base Product Number: TSM60 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 100 V Power Dissipation (Max): 41.7W (Tc) Mounting Type: Through Hole HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99

Win Source Part Number: 1380171-TSM60NB600CF
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 43 pct.
Mfr: Taiwan Semiconductor Corporation
Package: Tube
Product Status: Active
Package / Case: TO-220-3 Full Pack
Supplier Device Package: ITO-220S
Base Product Number: TSM60
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 100 V
Power Dissipation (Max): 41.7W (Tc)
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

Buy Now Datasheet
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TSM60NB600CF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TSM60NB600CF
600V, 8A, SINGLE N-CHANNEL POWER

600V, 8A, SINGLE N-CHANNEL POWER

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Technical Specifications

  Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors RF Transistors
Product Number 1380171-TSM60NB600CF TSM60NB600CF
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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