Taiwan Semiconductor Manufacturing Company, Ltd. MOSFET TSM2301BCX

Description
MOSFET 20V P channel MOSFET
Description
MOSFET 20V P channel MOSFET
Datasheet
Datasheet Summary
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P-channel power MOSFET in SOT-23 package rated for -20 V drain-source voltage and -2.8 A continuous drain current with a maximum on-state resistance of 150 mΩ at -2.5 V gate-source voltage. Junction temperature range is -55°C to +150°C, with thermal resistance of 120°C/W when mounted on FR-4 PCB in still air. Compliant with RoHS and halogen-free per IEC 61249-2-21. Moisture sensitivity level 3 per J-STD-020.

Datasheet Summary
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P-channel power MOSFET in SOT-23 package rated for -20 V drain-source voltage and -2.8 A continuous drain current with a maximum on-state resistance of 150 mΩ at -2.5 V gate-source voltage. Junction temperature range is -55°C to +150°C, with thermal resistance of 120°C/W when mounted on FR-4 PCB in still air. Compliant with RoHS and halogen-free per IEC 61249-2-21. Moisture sensitivity level 3 per J-STD-020.

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Sheung Wan, Hong Kong
MOSFET 20V P channel MOSFET

MOSFET 20V P channel MOSFET

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number TSM2301BCX
Product Name MOSFET
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