Taiwan Semiconductor Manufacturing Company, Ltd. Single FETs, MOSFETs TSM1NB60CW

Description
600V, 1A, SINGLE N-CHANNEL POWER
Request a Quote Datasheet
Description
600V, 1A, SINGLE N-CHANNEL POWER
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - TSM1NB60CW - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
TSM1NB60CW
Single FETs, MOSFETs TSM1NB60CW
600V, 1A, SINGLE N-CHANNEL POWER

600V, 1A, SINGLE N-CHANNEL POWER

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1380160-TSM1NB60CW - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1380160-TSM1NB60CW
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1380160-TSM1NB60CW
Win Source Part Number: 1380160-TSM1NB60CW Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Tape & Reel Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 42 pct. Mfr: Taiwan Semiconductor Corporation Product Status: Active Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223 Base Product Number: TSM1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V Power Dissipation (Max): 2.1W (Tc) Mounting Type: Surface Mount HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99

Win Source Part Number: 1380160-TSM1NB60CW
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 42 pct.
Mfr: Taiwan Semiconductor Corporation
Product Status: Active
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Product Number: TSM1
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Power Dissipation (Max): 2.1W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TSM1NB60CW
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TSM1NB60CW
600V, 1A, SINGLE N-CHANNEL POWER

600V, 1A, SINGLE N-CHANNEL POWER

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number TSM1NB60CW 1380160-TSM1NB60CW TSM1NB60CW
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts
IDSS 1000 milliamps
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