High voltage NPN transistor with integrated anti-parallel diode for efficient anti-saturation operation in half-bridge light ballast applications, packaged in TO-252 (DPAK) with a collector current rating of 4 A, collector-emitter breakdown voltage of 400 V, collector-base breakdown voltage of 700 V, and maximum junction temperature of +150°C. Thermal resistance from junction to ambient is 68°C/W. The device meets RoHS standards and is halogen-free. Features include low base drive requirement and silicon triple diffused structure.
Bipolar Transistors - BJT High voltage NPN Transistor w/diode
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | TSC5304EDCP RO |
| Product Name | Bipolar Transistors - BJT |
