NPN silicon transistor in SOT-23 package, rated for 200 mW power dissipation, with a collector-emitter voltage of 30 V, collector current of 100 mA, and DC current gain ranging from 110 to 220. The device operates over a junction and storage temperature range of -55 °C to +150 °C, features a matte tin lead finish, and is RoHS compliant and halogen-free. It meets MIL-STD-202 solderability requirements and has a moisture sensitivity level of 1. The physical dimensions are 2.70 mm to 3.10 mm in length, 1.10 mm to 1.50 mm in width, and 0.30 mm to 0.51 mm in thickness.
Bipolar Transistors - BJT Transistor 200mW
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC848A RF |
| Product Name | Bipolar Transistors - BJT |
