Taiwan Metalworking Corporation Transistors TMN3030D

Description
30V 30A 5.5W 9.5mΩ@10V 1.5V 1 N-Channel TO-252-3L MOSFETs ROHS
Request a Quote
Description
30V 30A 5.5W 9.5mΩ@10V 1.5V 1 N-Channel TO-252-3L MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - TMN3030D - ODG (Origin Data Global)
Shenzhen, China
Transistors
TMN3030D
Transistors TMN3030D
30V 30A 5.5W 9.5mΩ@10V 1.5V 1 N-Channel TO-252-3L MOSFETs ROHS

30V 30A 5.5W 9.5mΩ@10V 1.5V 1 N-Channel TO-252-3L MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number TMN3030D
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT - TGF2023-2-02 - Qorvo
Specs
Transistor Type HEMT
Transistor Technology / Material GaN on SiC
Package Type Die
View Details
4 suppliers
Transistor - 32488412 - Radwell International
Fuji Electric Corp. of America
View Details
NPN general-purpose transistor - 2PC4081S-QX - Nexperia B.V.
Specs
Transistor Type BJT
Package Type SOT323; SOT323
View Details
2 suppliers