STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY139N65M5 STY139N65M5

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1262421-STY139N65M5 Series: MDmesh V Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: MAX247 Channel Type Type: N Drain Source Voltage: 650V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 363nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 15600pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 625W (Tc) Rds On (Maximum) @ Id, Vgs: 17 mOhm @ 65A, 10V Alternative Parts (Cross-Reference): IPW65R019C7; STW78N65M5; APT94N65B2C3G; Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY139N65M5 - 1262421-STY139N65M5 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-13043-5-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - STY139N65M5 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet, N-Ch, 650V, 130A, Max-247; Channel Type Stmicroelectronics - 45AC7799 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STY139N65M5 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1262421-STY139N65M5 Series: MDmesh V Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: MAX247 Channel Type Type: N Drain Source Voltage: 650V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 363nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 15600pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 625W (Tc) Rds On (Maximum) @ Id, Vgs: 17 mOhm @ 65A, 10V Alternative Parts (Cross-Reference): IPW65R019C7; STW78N65M5; APT94N65B2C3G; Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY139N65M5 - 1262421-STY139N65M5 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY139N65M5
1262421-STY139N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY139N65M5 1262421-STY139N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 1262421-STY139N65M5 Series: MDmesh V Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: MAX247 Channel Type Type: N Drain Source Voltage: 650V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 363nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 15600pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 625W (Tc) Rds On (Maximum) @ Id, Vgs: 17 mOhm @ 65A, 10V Alternative Parts (Cross-Reference): IPW65R019C7; STW78N65M5; APT94N65B2C3G; Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1262421-STY139N65M5
Series: MDmesh V
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: MAX247
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 363nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 15600pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 625W (Tc)
Rds On (Maximum) @ Id, Vgs: 17 mOhm @ 65A, 10V
Alternative Parts (Cross-Reference): IPW65R019C7; STW78N65M5; APT94N65B2C3G;
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-13043-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13043-5-ND
Single FETs, MOSFETs 497-13043-5-ND
N-Channel 650V 130A (Tc) 625W (Tc) Through Hole MAX247™

N-Channel 650V 130A (Tc) 625W (Tc) Through Hole MAX247™

Buy Now Datasheet
Single FETs, MOSFETs - STY139N65M5 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STY139N65M5
Single FETs, MOSFETs STY139N65M5
MOSFET N-CH 650V 130A MAX247

MOSFET N-CH 650V 130A MAX247

Supplier's Site Datasheet
Mosfet, N-Ch, 650V, 130A, Max-247; Channel Type Stmicroelectronics - 45AC7799 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 130A, Max-247; Channel Type Stmicroelectronics
45AC7799
Mosfet, N-Ch, 650V, 130A, Max-247; Channel Type Stmicroelectronics 45AC7799
MOSFET, N-CH, 650V, 130A, MAX-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:130A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 650V, 130A, MAX-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:130A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STY139N65M5
MOSFET STY139N65M5
MOSFET N-Ch 650V 0.014 Ohm Mdmesh M5 130A

MOSFET N-Ch 650V 0.014 Ohm Mdmesh M5 130A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STY139N65M5 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STY139N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STY139N65M5
MOSFET N-CH 650V 130A MAX247

MOSFET N-CH 650V 130A MAX247

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1262421-STY139N65M5 497-13043-5-ND STY139N65M5 45AC7799 STY139N65M5 STY139N65M5
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY139N65M5 Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N-Ch, 650V, 130A, Max-247; Channel Type Stmicroelectronics MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
QG 363 nC
PD 625000 milliwatts 625000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
Package Type TO-247; SOT3 TO-247; TO-247-3 TO-247; TO-247-3 TO-3 TO-247; TO-247-3
Packing Method Tube; Tube Tube; Tube
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