STMicroelectronics, Inc. Single FETs, MOSFETs STY139N65M5

Description
MOSFET N-CH 650V 130A MAX247
  • Single FETs, MOSFETs - STY139N65M5 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 497-13043-5-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY139N65M5 - 1262421-STY139N65M5 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STY139N65M5 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 650V, 130A, Max-247; Channel Type Stmicroelectronics - 45AC7799 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
MOSFET N-CH 650V 130A MAX247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STY139N65M5 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STY139N65M5
Single FETs, MOSFETs STY139N65M5
MOSFET N-CH 650V 130A MAX247

MOSFET N-CH 650V 130A MAX247

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-13043-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13043-5-ND
Single FETs, MOSFETs 497-13043-5-ND
N-Channel 650V 130A (Tc) 625W (Tc) Through Hole MAX247™

N-Channel 650V 130A (Tc) 625W (Tc) Through Hole MAX247™

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY139N65M5 - 1262421-STY139N65M5 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY139N65M5
1262421-STY139N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY139N65M5 1262421-STY139N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 1262421-STY139N65M5 Series: MDmesh V Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: MAX247 Channel Type Type: N Drain Source Voltage: 650V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 363nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 15600pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 625W (Tc) Rds On (Maximum) @ Id, Vgs: 17 mOhm @ 65A, 10V Alternative Parts (Cross-Reference): IPW65R019C7; STW78N65M5; APT94N65B2C3G; Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1262421-STY139N65M5
Series: MDmesh V
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: MAX247
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 363nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 15600pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 625W (Tc)
Rds On (Maximum) @ Id, Vgs: 17 mOhm @ 65A, 10V
Alternative Parts (Cross-Reference): IPW65R019C7; STW78N65M5; APT94N65B2C3G;
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STY139N65M5 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STY139N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STY139N65M5
MOSFET N-CH 650V 130A MAX247

MOSFET N-CH 650V 130A MAX247

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STY139N65M5
MOSFET STY139N65M5
MOSFET N-Ch 650V 0.014 Ohm Mdmesh M5 130A

MOSFET N-Ch 650V 0.014 Ohm Mdmesh M5 130A

Buy Now Datasheet
Mosfet, N-Ch, 650V, 130A, Max-247; Channel Type Stmicroelectronics - 45AC7799 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 130A, Max-247; Channel Type Stmicroelectronics
45AC7799
Mosfet, N-Ch, 650V, 130A, Max-247; Channel Type Stmicroelectronics 45AC7799
MOSFET, N-CH, 650V, 130A, MAX-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:130A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 650V, 130A, MAX-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:130A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number STY139N65M5 497-13043-5-ND 1262421-STY139N65M5 STY139N65M5 STY139N65M5 45AC7799
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY139N65M5 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 650V, 130A, Max-247; Channel Type Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 650 volts
IDSS 130000 milliamps 130000 milliamps
PD 625000 milliwatts 625000 milliwatts
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