N-Channel 650V 130A (Tc) 625W (Tc) Through Hole MAX247™
650V 130A N-CH Power MOSFET TO-247 17mR Rds(on) Product overview: STY139N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 130A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 130A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STY139N65M5 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1262421-STY139N65M5
Series: MDmesh V
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: MAX247
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 363nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 15600pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 625W (Tc)
Rds On (Maximum) @ Id, Vgs: 17 mOhm @ 65A, 10V
Alternative Parts (Cross-Reference): IPW65R019C7; STW78N65M5; APT94N65B2C3G;
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
MOSFET N-CH 650V 130A MAX247
MOSFET, N-CH, 650V, 130A, MAX-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:130A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 650V 130A MAX247
MOSFET N-Ch 650V 0.014 Ohm Mdmesh M5 130A
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-13043-5-ND | 278-STY139N65M5 | 1262421-STY139N65M5 | STY139N65M5 | 45AC7799 | STY139N65M5 | STY139N65M5 |
| Product Name | Single FETs, MOSFETs | 650V 130A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY139N65M5 | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 130A, Max-247; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3 | TO-247; TO-247-3 | TO-3 | TO-247; TO-247-3 | ||
| PD | 625000 milliwatts | 625000 milliwatts | 625000 milliwatts | ||||
| TJ | -55 C (-67 F) | 150 C (302 F) | 150 C (302 F) | ||||
| QG | 363 nC |
