STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single STX1F10

Description
Win Source Part Number: 1278612-STX1F10 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 2,500 Power - Max: 2.8 W Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 1.5 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 250µA DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92 Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 53 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: STX1F10,497-12708 Base Product Number: STX1F10 Product Status: Obsolete
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Description
Win Source Part Number: 1278612-STX1F10 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 2,500 Power - Max: 2.8 W Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 1.5 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 250µA DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92 Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 53 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: STX1F10,497-12708 Base Product Number: STX1F10 Product Status: Obsolete
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Datasheet
Datasheet Summary
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The STX1F10 is a high-voltage fast-switching NPN bipolar junction transistor designed for applications such as battery chargers. It is packaged in a TO-92 case, with dimensions of up to 4.95 mm in diameter and 15.49 mm in length. The device has a collector-emitter breakdown voltage of 980 V at zero base-emitter voltage and a maximum collector current of 1.5 A. It operates with a maximum junction temperature of 150 °C and a power dissipation limit of 2.8 W at 25 °C. Thermal resistance from junction to case is rated at a maximum of 44.6 °C/W. The transistor exhibits a collector-emitter saturation voltage of up to 1.5 V at 1 A collector current and 200 mA base current, and a DC current gain (hFE) ranging from 14 to 61 under specified test conditions. It meets ECOPACK® environmental packaging standards.

Datasheet Summary
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The STX1F10 is a high-voltage fast-switching NPN bipolar junction transistor designed for applications such as battery chargers. It is packaged in a TO-92 case, with dimensions of up to 4.95 mm in diameter and 15.49 mm in length. The device has a collector-emitter breakdown voltage of 980 V at zero base-emitter voltage and a maximum collector current of 1.5 A. It operates with a maximum junction temperature of 150 °C and a power dissipation limit of 2.8 W at 25 °C. Thermal resistance from junction to case is rated at a maximum of 44.6 °C/W. The transistor exhibits a collector-emitter saturation voltage of up to 1.5 V at 1 A collector current and 200 mA base current, and a DC current gain (hFE) ranging from 14 to 61 under specified test conditions. It meets ECOPACK® environmental packaging standards.

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1278612-STX1F10 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1278612-STX1F10
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1278612-STX1F10
Win Source Part Number: 1278612-STX1F10 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 2,500 Power - Max: 2.8 W Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 1.5 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 250µA DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92 Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 53 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: STX1F10,497-12708 Base Product Number: STX1F10 Product Status: Obsolete

Win Source Part Number: 1278612-STX1F10
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Bulk
Standard Package: 2,500
Power - Max: 2.8 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 1.5 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: STX1F10,497-12708
Base Product Number: STX1F10
Product Status: Obsolete

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1278612-STX1F10
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
Polarity NPN
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