N-Channel 650V 60A (Tc) 446W (Tc) Through Hole TO-247 Long Leads
Win Source Part Number: 1278112-STWA63N65DM2
Category: Discrete Semiconductor Products>Transistors
Series: MDmesh™ DM2
Package: Tube
Standard Package: 600
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 446W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 Long Leads
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Base Product Number: STWA63
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET, N-CH, 60A, 650V, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes
MOSFET N-CH 650V 60A TO247
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 497-STWA63N65DM2-ND | 1278112-STWA63N65DM2 | STWA63N65DM2 | 94AC2378 | STWA63N65DM2 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Mosfet, N-Ch, 60A, 650V, To-247; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
