STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single STW70N60DM6-4

Description
Win Source Part Number: 1160621-STW70N60DM6- 4 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 31A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 390W (Tc) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: TO-247-4 Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 60 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-19786,-1138-STW7 0N60DM6-4,STW70N60DM 6-4-ND Base Product Number: STW70 Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1160621-STW70N60DM6-4 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-19786-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW70N60DM6-4 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Win Source Part Number: 1160621-STW70N60DM6- 4 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 31A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 390W (Tc) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: TO-247-4 Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 60 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-19786,-1138-STW7 0N60DM6-4,STW70N60DM 6-4-ND Base Product Number: STW70 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1160621-STW70N60DM6-4 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1160621-STW70N60DM6-4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1160621-STW70N60DM6-4
Win Source Part Number: 1160621-STW70N60DM6- 4 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 31A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 390W (Tc) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: TO-247-4 Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 60 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-19786,-1138-STW7 0N60DM6-4,STW70N60DM 6-4-ND Base Product Number: STW70 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1160621-STW70N60DM6-4
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 31A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 390W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: TO-247-4
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 60 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-19786,-1138-STW70N60DM6-4,STW70N60DM6-4-ND
Base Product Number: STW70
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - 497-19786-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-19786-ND
Single FETs, MOSFETs 497-19786-ND
N-Channel 600V 62A (Tc) 390W (Tc) Through Hole TO-247-4

N-Channel 600V 62A (Tc) 390W (Tc) Through Hole TO-247-4

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STW70N60DM6-4
MOSFET STW70N60DM6-4
MOSFET TO247-4

MOSFET TO247-4

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW70N60DM6-4 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW70N60DM6-4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW70N60DM6-4
MOSFET N-CH 600V 62A TO247-4

MOSFET N-CH 600V 62A TO247-4

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1160621-STW70N60DM6-4 497-19786-ND STW70N60DM6-4 STW70N60DM6-4
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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