STMicroelectronics, Inc. Single FETs, MOSFETs STW69N65M5

Description
N-Channel 650V 58A (Tc) 330W (Tc) Through Hole TO-247-3
Request a Quote Datasheet
Description
N-Channel 650V 58A (Tc) 330W (Tc) Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-12987-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12987-5-ND
Single FETs, MOSFETs 497-12987-5-ND
N-Channel 650V 58A (Tc) 330W (Tc) Through Hole TO-247-3

N-Channel 650V 58A (Tc) 330W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Single FETs, MOSFETs - STW69N65M5 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW69N65M5
Single FETs, MOSFETs STW69N65M5
MOSFET N-CH 650V 58A TO247

MOSFET N-CH 650V 58A TO247

Supplier's Site Datasheet
Electronic Wholesale - STW69N65M5 - 1262385-STW69N65M5 - Win Source Electronics
Laguna Hills, CA, United States
Electronic Wholesale - STW69N65M5
1262385-STW69N65M5
Electronic Wholesale - STW69N65M5 1262385-STW69N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 1262385-STW69N65M5 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Family Name: STW69N65M5 Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 330W Alternative Parts (Cross-Reference): TK62N60W(S1VF,S); SiHW73N60E-GE3; IPW60R045CPX; TK62N60W; Introduction Date: February 27, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2032 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 650V Id - Continuous Drain Current: 58A Rds On (Maximum) at Id, Vgs: 45mOhm at 29A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 143nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 6420pF at 100V

Manufacturer: STMicroelectronics
Win Source Part Number: 1262385-STW69N65M5
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: STW69N65M5
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 330W
Alternative Parts (Cross-Reference): TK62N60W(S1VF,S); SiHW73N60E-GE3; IPW60R045CPX; TK62N60W;
Introduction Date: February 27, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2032
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 58A
Rds On (Maximum) at Id, Vgs: 45mOhm at 29A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 143nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 6420pF at 100V

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 650V 0.037 Ohm 58A MDMesh M5 MOS

MOSFET N-Ch 650V 0.037 Ohm 58A MDMesh M5 MOS

Buy Now Datasheet
Power Mosfet, N Channel, 58 A, 650 V, 0.037 Ohm, 10 V, 4 V Rohs Compliant Stmicroelectronics - 06X0915 - Newark, An Avnet Company
Chicago, IL, United States
Power Mosfet, N Channel, 58 A, 650 V, 0.037 Ohm, 10 V, 4 V Rohs Compliant Stmicroelectronics
06X0915
Power Mosfet, N Channel, 58 A, 650 V, 0.037 Ohm, 10 V, 4 V Rohs Compliant Stmicroelectronics 06X0915
Power MOSFET, N Channel, 58 A, 650 V, 0.037 ohm, 10 V, 4 V RoHS Compliant: Yes

Power MOSFET, N Channel, 58 A, 650 V, 0.037 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW69N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW69N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW69N65M5
MOSFET N-CH 650V 58A TO247

MOSFET N-CH 650V 58A TO247

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors
Product Number 497-12987-5-ND STW69N65M5 1262385-STW69N65M5 STW69N65M5 06X0915 STW69N65M5
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Electronic Wholesale - STW69N65M5 MOSFET Power Mosfet, N Channel, 58 A, 650 V, 0.037 Ohm, 10 V, 4 V Rohs Compliant Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type TO-247; TO-247-3 TO-247; TO-247-3 TO-3; TO-247; SOT3 TO-3 TO-247; TO-247-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 650 volts 650 volts
IDSS 58000 milliamps
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