Automotive-grade N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package Product overview: STW58N65DM2AG from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, N-Channel, 650 V, 0.058 Ohm, 48 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 650 V, 0.058 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW58N65DM2AG can be used for catalog matching and distributor lookup.
MOSFET N-CH 650V 48A TO247
Manufacturer: STMicroelectronics
Win Source Part Number: 898530-STW58N65DM2AG
Series: Automotive, AEC-Q101, MDmesh™ DM2
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 650 V 48A (Tc) 360W (Tc) Through Hole TO-247-3
Package: TO-247-3
Package: Tube
Mounting: Through Hole
Family Name: STW58
Categories: Discrete Semiconductor Products
Case / Package: TO-247-3
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 84 pct.
Supply and Demand Status: Balance
Quantity per package: 30
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 37 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-16137-5, -1138-STW58N65DM2AG
N-Channel 650V 48A (Tc) 360W (Tc) Through Hole TO-247-3
MOSFET, N-CH, 650V, 48A, TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
MOSFET Automotive-grade N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package
MOSFET N-CH 650V 48A TO247
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-STW58N65DM2AG | STW58N65DM2AG | 898530-STW58N65DM2AG | 497-16137-5-ND | 32AJ8927 | STW58N65DM2AG | STW58N65DM2AG |
| Product Name | Automotive N-Channel 650 V 0.058 Ohm MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW58N65DM2AG | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 48A, To247; Transistor Polarity Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 650 volts | ||||||
| IDSS | 48000 milliamps | 48000 milliamps | |||||
| PD | 360000 milliwatts |
