N-Channel 650V 42A (Tc) 250W (Tc) Through Hole TO-247-3
650V 42A N-Ch MOSFET TO-247 63mR RdsOn Product overview: STW57N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 42A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 42A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW57N65M5 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 031599-STW57N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 42A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 98nC @ 10V
Max Input Capacitance: 4200pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 63 mOhm @ 21A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
MOSFET N-CH 650V 42A TO247
STW57N65M5 Series 710 V 0.063 Ohm 42 A N-Channel MDmesh? V Power Mosfet - TO-247
MOSFET, N-CH, 650V, 42A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:42A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh M5
MOSFET N-CH 650V 42A TO247
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Utmel Electronic Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 497-13125-5-ND | 278-STW57N65M5 | 031599-STW57N65M5 | STW57N65M5 | 761-STW57N65M5 | 45AC7792 | STW57N65M5 | STW57N65M5 |
| Product Name | Single FETs, MOSFETs | 650V 42A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW57N65M5 | Single FETs, MOSFETs | STW57N65M5 Series 710 V 0.063 Ohm 42 A N-Channel MDmesh? V Power Mosfet - TO-247 | Mosfet, N-Ch, 650V, 42A, To-247; Channel Type Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3; TO-247 | TO-247; TO-247-3 | TO-3; TO-247 | 10V | |||
| PD | 250000 milliwatts | 250000 milliwatts | 250000 milliwatts | 250000 milliwatts | ||||
| TJ | -55 C (-67 F) | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) | ||||
| V(BR)DSS | 650 volts | 650 volts | 650 volts |
