STMicroelectronics, Inc. Single FETs, MOSFETs STW57N65M5

Description
MOSFET N-CH 650V 42A TO247
Request a Quote Datasheet
Description
MOSFET N-CH 650V 42A TO247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STW57N65M5 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW57N65M5
Single FETs, MOSFETs STW57N65M5
MOSFET N-CH 650V 42A TO247

MOSFET N-CH 650V 42A TO247

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-13125-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13125-5-ND
Single FETs, MOSFETs 497-13125-5-ND
N-Channel 650V 42A (Tc) 250W (Tc) Through Hole TO-247-3

N-Channel 650V 42A (Tc) 250W (Tc) Through Hole TO-247-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW57N65M5 - 031599-STW57N65M5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW57N65M5
031599-STW57N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW57N65M5 031599-STW57N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 031599-STW57N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 42A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 98nC @ 10V Max Input Capacitance: 4200pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 63 mOhm @ 21A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 031599-STW57N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 42A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 98nC @ 10V
Max Input Capacitance: 4200pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 63 mOhm @ 21A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
STW57N65M5 Series 710 V 0.063 Ohm 42 A N-Channel MDmesh? V Power Mosfet - TO-247 - 761-STW57N65M5 - Utmel Electronic Limited
Hong Kong, China
STW57N65M5 Series 710 V 0.063 Ohm 42 A N-Channel MDmesh? V Power Mosfet - TO-247
761-STW57N65M5
STW57N65M5 Series 710 V 0.063 Ohm 42 A N-Channel MDmesh? V Power Mosfet - TO-247 761-STW57N65M5
STW57N65M5 Series 710 V 0.063 Ohm 42 A N-Channel MDmesh? V Power Mosfet - TO-247

STW57N65M5 Series 710 V 0.063 Ohm 42 A N-Channel MDmesh? V Power Mosfet - TO-247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh M5

MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh M5

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW57N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW57N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW57N65M5
MOSFET N-CH 650V 42A TO247

MOSFET N-CH 650V 42A TO247

Supplier's Site
Mosfet, N-Ch, 650V, 42A, To-247; Channel Type Stmicroelectronics - 45AC7792 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 42A, To-247; Channel Type Stmicroelectronics
45AC7792
Mosfet, N-Ch, 650V, 42A, To-247; Channel Type Stmicroelectronics 45AC7792
MOSFET, N-CH, 650V, 42A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:42A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 650V, 42A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:42A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number STW57N65M5 497-13125-5-ND 031599-STW57N65M5 761-STW57N65M5 STW57N65M5 STW57N65M5 45AC7792
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW57N65M5 STW57N65M5 Series 710 V 0.063 Ohm 42 A N-Channel MDmesh? V Power Mosfet - TO-247 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 650V, 42A, To-247; Channel Type Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 650 volts 650 volts 650 volts
IDSS 42000 milliamps 42000 milliamps
PD 250000 milliwatts 250000 milliwatts 250000 milliwatts
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