STMicroelectronics, Inc. Single FETs, MOSFETs STW47NM60ND

Description
N-Channel 600V 35A (Tc) 255W (Tc) Through Hole TO-247-3
Request a Quote Datasheet
Description
N-Channel 600V 35A (Tc) 255W (Tc) Through Hole TO-247-3
Request a Quote Datasheet

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Description
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Single FETs, MOSFETs - 497-13126-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13126-5-ND
Single FETs, MOSFETs 497-13126-5-ND
N-Channel 600V 35A (Tc) 255W (Tc) Through Hole TO-247-3

N-Channel 600V 35A (Tc) 255W (Tc) Through Hole TO-247-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW47NM60ND - 1262369-STW47NM60ND - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW47NM60ND
1262369-STW47NM60ND
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW47NM60ND 1262369-STW47NM60ND
Manufacturer: STMicroelectronics Win Source Part Number: 1262369-STW47NM60ND Series: FDmesh II Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: TO-247 Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 4200pF @ 50V Vgs (Maximum): ±25V Power Dissipation (Maximum): 255W (Tc) Rds On (Maximum) @ Id, Vgs: 88 mOhm @ 17.5A, 10V Alternative Parts (Cross-Reference): IPW60R070P6; STW36NM60ND; R6535ENZVC8; Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance Quantity per package: 30

Manufacturer: STMicroelectronics
Win Source Part Number: 1262369-STW47NM60ND
Series: FDmesh II
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 120nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 4200pF @ 50V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 255W (Tc)
Rds On (Maximum) @ Id, Vgs: 88 mOhm @ 17.5A, 10V
Alternative Parts (Cross-Reference): IPW60R070P6; STW36NM60ND; R6535ENZVC8;
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
Quantity per package: 30

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW47NM60ND - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW47NM60ND
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW47NM60ND
MOSFET N-CH 600V 35A TO247

MOSFET N-CH 600V 35A TO247

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET RF Transistors
Product Number 497-13126-5-ND 1262369-STW47NM60ND STW47NM60ND
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW47NM60ND Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3 TO-247; TO-247-3
Transistor Grade / Operating Range Automotive
QG 120 nC
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