STMicroelectronics, Inc. Single FETs, MOSFETs STW43NM60ND

Description
MOSFET N-CH 600V 35A TO247-3
Request a Quote Datasheet
Description
MOSFET N-CH 600V 35A TO247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STW43NM60ND - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW43NM60ND
Single FETs, MOSFETs STW43NM60ND
MOSFET N-CH 600V 35A TO247-3

MOSFET N-CH 600V 35A TO247-3

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-8461-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-8461-5-ND
Single FETs, MOSFETs 497-8461-5-ND
N-Channel 600V 35A (Tc) 255W (Tc) Through Hole TO-247-3

N-Channel 600V 35A (Tc) 255W (Tc) Through Hole TO-247-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW43NM60ND - 031597-STW43NM60ND - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW43NM60ND
031597-STW43NM60ND
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW43NM60ND 031597-STW43NM60ND
Manufacturer: STMicroelectronics Win Source Part Number: 031597-STW43NM60ND Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 255W (Tc) Family Name: STW43NM60ND Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 35A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 145nC @ 10V Max Input Capacitance: 4300pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 88 mOhm @ 17.5A, 10V Alternative Parts (Cross-Reference): TK31N60W(S1VF,S); TK31N60W,S1VF; TK31N60X; Introduction Date: October 28, 2002 ECCN: EAR99 Country of Origin: China Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance Quantity per package: 30

Manufacturer: STMicroelectronics
Win Source Part Number: 031597-STW43NM60ND
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 255W (Tc)
Family Name: STW43NM60ND
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 145nC @ 10V
Max Input Capacitance: 4300pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 88 mOhm @ 17.5A, 10V
Alternative Parts (Cross-Reference): TK31N60W(S1VF,S); TK31N60W,S1VF; TK31N60X;
Introduction Date: October 28, 2002
ECCN: EAR99
Country of Origin: China
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
Quantity per package: 30

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-channel 600V, 35A FDMesh II

MOSFET N-channel 600V, 35A FDMesh II

Buy Now Datasheet
N Channel Power Mosfet, Fdmesh, 600V, 35A, To-247; Channel Type Stmicroelectronics - 57P2652 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Power Mosfet, Fdmesh, 600V, 35A, To-247; Channel Type Stmicroelectronics
57P2652
N Channel Power Mosfet, Fdmesh, 600V, 35A, To-247; Channel Type Stmicroelectronics 57P2652
N CHANNEL POWER MOSFET, FDmesh, 600V, 35A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:35A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:255W; MSL:- RoHS Compliant: Yes

N CHANNEL POWER MOSFET, FDmesh, 600V, 35A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:35A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:255W; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW43NM60ND - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW43NM60ND
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW43NM60ND
MOSFET N-CH 600V 35A TO247-3

MOSFET N-CH 600V 35A TO247-3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors
Product Number STW43NM60ND 497-8461-5-ND 031597-STW43NM60ND STW43NM60ND 57P2652 STW43NM60ND
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW43NM60ND MOSFET N Channel Power Mosfet, Fdmesh, 600V, 35A, To-247; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
IDSS 35000 milliamps 35000 milliamps
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