STMicroelectronics, Inc. Single FETs, MOSFETs STW38N65M5

Description
N-Channel 650V 30A (Tc) 190W (Tc) Through Hole TO-247-3
  • Single FETs, MOSFETs - 497-13124-5-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - STW38N65M5 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Electronic Wholesale - STW38N65M5 - 1262362-STW38N65M5 - Win Source Electronics
    Win Source Electronics
  • Mosfet, N-Ch, 650V, 30A, To-247; Transistor Polarity Stmicroelectronics - 51AC9619 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW38N65M5 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-Channel 650V 30A (Tc) 190W (Tc) Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-13124-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13124-5-ND
Single FETs, MOSFETs 497-13124-5-ND
N-Channel 650V 30A (Tc) 190W (Tc) Through Hole TO-247-3

N-Channel 650V 30A (Tc) 190W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Single FETs, MOSFETs - STW38N65M5 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW38N65M5
Single FETs, MOSFETs STW38N65M5
MOSFET N-CH 650V 30A TO247

MOSFET N-CH 650V 30A TO247

Supplier's Site Datasheet
Electronic Wholesale - STW38N65M5 - 1262362-STW38N65M5 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Electronic Wholesale - STW38N65M5
1262362-STW38N65M5
Electronic Wholesale - STW38N65M5 1262362-STW38N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 1262362-STW38N65M5 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 190W Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 650V Id - Continuous Drain Current: 30A Rds On (Maximum) at Id, Vgs: 95mOhm at 15A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 71nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 3000pF at 100V

Manufacturer: STMicroelectronics
Win Source Part Number: 1262362-STW38N65M5
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 190W
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 30A
Rds On (Maximum) at Id, Vgs: 95mOhm at 15A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 71nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 3000pF at 100V

Buy Now
Mosfet, N-Ch, 650V, 30A, To-247; Transistor Polarity Stmicroelectronics - 51AC9619 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 30A, To-247; Transistor Polarity Stmicroelectronics
51AC9619
Mosfet, N-Ch, 650V, 30A, To-247; Transistor Polarity Stmicroelectronics 51AC9619
MOSFET, N-CH, 650V, 30A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes

MOSFET, N-CH, 650V, 30A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STW38N65M5
MOSFET STW38N65M5
MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5

MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW38N65M5 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW38N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW38N65M5
MOSFET N-CH 650V 30A TO247

MOSFET N-CH 650V 30A TO247

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-13124-5-ND STW38N65M5 1262362-STW38N65M5 51AC9619 STW38N65M5 STW38N65M5
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Electronic Wholesale - STW38N65M5 Mosfet, N-Ch, 650V, 30A, To-247; Transistor Polarity Stmicroelectronics MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; TO-247-3 TO-247; SOT3 TO-3; TO-247 Through Hole
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 650 volts 650 volts
IDSS 30000 milliamps 30000 milliamps
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