N-Channel 550V 33A (Tc) 190W (Tc) Through Hole TO-247-3
550V 33A N-CH MOSFET TO-247 80mR RdsOn Product overview: STW36N55M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 550V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 550V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW36N55M5 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1262361-STW36N55M5
Series: MDmesh V
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Family Name: STW36N55M5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247
Channel Type Type: N
Drain Source Voltage: 550V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 62nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2950pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 190W (Tc)
Rds On (Maximum) @ Id, Vgs: 80 mOhm @ 16.5A, 10V
Alternative Parts (Cross-Reference): APT81H50L; APT50M65B2LL; APT50M60L2VFRG;
Introduction Date: March 07, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
MOSFET N-CH 550V 33A TO247
MOSFET, N-CH, 550V, 33A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:550V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-Ch 550V 0.06 Ohm 33A MDmesh M5 FET
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-13285-5-ND | 278-STW36N55M5 | 1262361-STW36N55M5 | STW36N55M5 | 45AC7789 | STW36N55M5 |
| Product Name | Single FETs, MOSFETs | 550V 33A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW36N55M5 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 550V, 33A, To-247; Channel Type Stmicroelectronics | MOSFET |
| Polarity | N-Channel | N-Channel | ||||
| Package Type | TO-247; TO-247-3 | TO-220; TO-247; SOT3 | TO-247; TO-247-3 | TO-3; TO-247 | ||
| PD | 190000 milliwatts | 190000 milliwatts | ||||
| TJ | -55 C (-67 F) | 150 C (302 F) |
