Manufacturer: STMicroelectronics
Win Source Part Number: 212435-STW35N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Family Name: STW35N65M5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 27A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 83nC @ 10V
Max Input Capacitance: 3750pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 98 mOhm @ 13.5A, 10V
Alternative Parts (Cross-Reference): SiHG28N65EF-GE3IXKH3
Introduction Date: July 29, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
N-Channel 650V 27A (Tc) 160W (Tc) Through Hole TO-247-3
MOSFET N-CH 650V 27A TO247-3
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 212435-STW35N65M5 | 497-11000-5-ND | STW35N65M5 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW35N65M5 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 650 volts | ||
| PD | 160000 milliwatts |