STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW35N65M5 STW35N65M5

Description
Manufacturer: STMicroelectronics Win Source Part Number: 212435-STW35N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Family Name: STW35N65M5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 27A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 83nC @ 10V Max Input Capacitance: 3750pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 98 mOhm @ 13.5A, 10V Alternative Parts (Cross-Reference): SiHG28N65EF-GE3IXKH3 0N60C5; IPW65R110CFDA; IPW65R110CFDAXK; Introduction Date: July 29, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 212435-STW35N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Family Name: STW35N65M5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 27A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 83nC @ 10V Max Input Capacitance: 3750pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 98 mOhm @ 13.5A, 10V Alternative Parts (Cross-Reference): SiHG28N65EF-GE3IXKH3 0N60C5; IPW65R110CFDA; IPW65R110CFDAXK; Introduction Date: July 29, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW35N65M5 - 212435-STW35N65M5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW35N65M5
212435-STW35N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW35N65M5 212435-STW35N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 212435-STW35N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Family Name: STW35N65M5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 27A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 83nC @ 10V Max Input Capacitance: 3750pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 98 mOhm @ 13.5A, 10V Alternative Parts (Cross-Reference): SiHG28N65EF-GE3IXKH3 0N60C5; IPW65R110CFDA; IPW65R110CFDAXK; Introduction Date: July 29, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 212435-STW35N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Family Name: STW35N65M5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 27A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 83nC @ 10V
Max Input Capacitance: 3750pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 98 mOhm @ 13.5A, 10V
Alternative Parts (Cross-Reference): SiHG28N65EF-GE3IXKH30N60C5; IPW65R110CFDA; IPW65R110CFDAXK;
Introduction Date: July 29, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 497-11000-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-11000-5-ND
Single FETs, MOSFETs 497-11000-5-ND
N-Channel 650V 27A (Tc) 160W (Tc) Through Hole TO-247-3

N-Channel 650V 27A (Tc) 160W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW35N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW35N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW35N65M5
MOSFET N-CH 650V 27A TO247-3

MOSFET N-CH 650V 27A TO247-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 212435-STW35N65M5 497-11000-5-ND STW35N65M5
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW35N65M5 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 650 volts
PD 160000 milliwatts
Unlock Full Specs
to access all available technical data