The STMicroelectronics N-channel MOSFET, part number 45AC7787, is designed for high-efficiency applications with a maximum drain-source voltage of 600V and a continuous drain current rating of 26A. It features a low on-resistance of 0.108 Oc, which contributes to reduced power losses in switching applications. The device is built using MDmesh II Plus technology, providing low gate charge and improved performance compared to previous generations. It is suitable for use in LCC converters and resonant converters, making it a viable option for demanding power management tasks. The MOSFET is available in a TO-247 package, which allows for through-hole mounting. Additionally, it has been 100% avalanche tested and is Zener-protected, ensuring reliability in various operating conditions.
Manufacturer: STMicroelectronics
Win Source Part Number: 1262360-STW33N60M2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 190W
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 26A
Rds On (Maximum) at Id, Vgs: 125mOhm at 13A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 45.5nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 1781pF at 100V
MOSFET N-CH 600V 26A TO247
N-Channel 600V 26A (Tc) 190W (Tc) Through Hole TO-247-3
MOSFET N-CH 600V 26A TO247
MOSFET N-CH 600V 0.108Ohm typ. 26A MDmesh M2
600V 26A 190W 125mΩ@10V,13A 4V@250uA N Channel TO-247-3 MOSFETs ROHS
MOSFET, N-CH, 600V, 26A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:26A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1262360-STW33N60M2 | STW33N60M2 | 497-14293-5-ND | STW33N60M2 | STW33N60M2 | STW33N60M2 | 45AC7787 |
| Product Name | FETs - Single - STW33N60M2 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, N-Ch, 600V, 26A, To-247; Channel Type Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 600 volts | 600 volts | 600 volts | ||||
| QG | 45.5 nC | ||||||
| PD | 190000 milliwatts | 190000 milliwatts | 190000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
