The STMicroelectronics N-channel MOSFET, part number 45AC7787, is designed for high-efficiency applications with a maximum drain-source voltage of 600V and a continuous drain current rating of 26A. It features a low on-resistance of 0.108 Oc, which contributes to reduced power losses in switching applications. The device is built using MDmesh II Plus technology, providing low gate charge and improved performance compared to previous generations. It is suitable for use in LCC converters and resonant converters, making it a viable option for demanding power management tasks. The MOSFET is available in a TO-247 package, which allows for through-hole mounting. Additionally, it has been 100% avalanche tested and is Zener-protected, ensuring reliability in various operating conditions.
600V 26A N-CH MOSFET TO-247 108mR Product overview: STW33N60M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 26A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 26A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW33N60M2 can be used for catalog matching and distributor lookup.
N-Channel 600V 26A (Tc) 190W (Tc) Through Hole TO-247-3
MOSFET N-CH 600V 26A TO247
Manufacturer: STMicroelectronics
Win Source Part Number: 1262360-STW33N60M2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 190W
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 26A
Rds On (Maximum) at Id, Vgs: 125mOhm at 13A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 45.5nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 1781pF at 100V
600V 26A 190W 125mΩ@10V,13A 4V@250uA N Channel TO-247-3 MOSFETs ROHS
MOSFET N-CH 600V 26A TO247
MOSFET N-CH 600V 0.108Ohm typ. 26A MDmesh M2
MOSFET, N-CH, 600V, 26A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:26A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STW33N60M2 | 497-14293-5-ND | STW33N60M2 | 1262360-STW33N60M2 | STW33N60M2 | STW33N60M2 | STW33N60M2 | 45AC7787 |
| Product Name | 600V 26A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | FETs - Single - STW33N60M2 | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 600V, 26A, To-247; Channel Type Stmicroelectronics |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 190000 milliwatts | 190000 milliwatts | 190000 milliwatts | 190000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-220; TO-247; SOT3 | TO-247 | TO-247; TO-247-3 | TO-3; TO-247 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
