STMicroelectronics, Inc. Single FETs, MOSFETs STW27NM60ND

Description
N-Channel 600V 21A (Tc) 160W (Tc) Through Hole TO-247-3
Request a Quote Datasheet
Description
N-Channel 600V 21A (Tc) 160W (Tc) Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - 497-10086-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10086-5-ND
Single FETs, MOSFETs 497-10086-5-ND
N-Channel 600V 21A (Tc) 160W (Tc) Through Hole TO-247-3

N-Channel 600V 21A (Tc) 160W (Tc) Through Hole TO-247-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW27NM60ND - 212433-STW27NM60ND - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW27NM60ND
212433-STW27NM60ND
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW27NM60ND 212433-STW27NM60ND
Manufacturer: STMicroelectronics Win Source Part Number: 212433-STW27NM60ND Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 21A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 160 mOhm @ 10.5A, 10V Alternative Parts (Cross-Reference): APT43M60B2; IPW60R099CPAFKSA1; SiHFPS38N60L-E3; Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited Quantity per package: 30

Manufacturer: STMicroelectronics
Win Source Part Number: 212433-STW27NM60ND
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 21A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 160 mOhm @ 10.5A, 10V
Alternative Parts (Cross-Reference): APT43M60B2; IPW60R099CPAFKSA1; SiHFPS38N60L-E3;
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
Quantity per package: 30

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW27NM60ND - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW27NM60ND
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW27NM60ND
MOSFET N-CH 600V 21A TO247-3

MOSFET N-CH 600V 21A TO247-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-10086-5-ND 212433-STW27NM60ND STW27NM60ND
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW27NM60ND Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247-3 TO-247; TO-247-3
Transistor Grade / Operating Range Automotive
V(BR)DSS 600 volts
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