STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW27NM60ND STW27NM60ND

Manufacturer: STMicroelectronics
Win Source Part Number: 212433-STW27NM60ND
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 21A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 160 mOhm @ 10.5A, 10V
Alternative Parts (Cross-Reference): APT43M60B2; IPW60R099CPAFKSA1; SiHFPS38N60L-E3;
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
Quantity per package: 30

Automotive-grade N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh II Power MOSFET (with fast diode) in TO-247 package Product overview: STW27NM60ND from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, N-Channel, 600 V, 0.13 Ohm, 21 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 600 V, 0.13 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW27NM60ND can be used for catalog matching and distributor lookup.

N-Channel 600V 21A (Tc) 160W (Tc) Through Hole TO-247-3