STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW26NM60N STW26NM60N

Description
Manufacturer: STMicroelectronics Win Source Part Number: 005601-STW26NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Family Name: STW26NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1800pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 165 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): IPW65R190C7XKSA1; IPW65R190CFD; SiHG22N65E-GE3; SiHW22N65E-GE3; Introduction Date: April 29, 2009 ECCN: EAR99 Country of Origin: China, France, Italy, Singapore Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance Application Field: Used in Industrial
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 005601-STW26NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Family Name: STW26NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1800pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 165 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): IPW65R190C7XKSA1; IPW65R190CFD; SiHG22N65E-GE3; SiHW22N65E-GE3; Introduction Date: April 29, 2009 ECCN: EAR99 Country of Origin: China, France, Italy, Singapore Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance Application Field: Used in Industrial
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW26NM60N - 005601-STW26NM60N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW26NM60N
005601-STW26NM60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW26NM60N 005601-STW26NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 005601-STW26NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Family Name: STW26NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1800pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 165 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): IPW65R190C7XKSA1; IPW65R190CFD; SiHG22N65E-GE3; SiHW22N65E-GE3; Introduction Date: April 29, 2009 ECCN: EAR99 Country of Origin: China, France, Italy, Singapore Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance Application Field: Used in Industrial

Manufacturer: STMicroelectronics
Win Source Part Number: 005601-STW26NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 140W (Tc)
Family Name: STW26NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 1800pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 165 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): IPW65R190C7XKSA1; IPW65R190CFD; SiHG22N65E-GE3; SiHW22N65E-GE3;
Introduction Date: April 29, 2009
ECCN: EAR99
Country of Origin: China, France, Italy, Singapore
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial

Buy Now Datasheet
MOSFETs - 7610304 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7610304
MOSFETs 7610304
MOSFET N-Channel 600V 20A TO247

MOSFET N-Channel 600V 20A TO247

Supplier's Site
MOSFETs - 1031991 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1031991
MOSFETs 1031991
MOSFET N-Channel 600V 20A TO247

MOSFET N-Channel 600V 20A TO247

Supplier's Site
MOSFETs - 7610304P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7610304P
MOSFETs 7610304P
MOSFET N-Channel 600V 20A TO247

MOSFET N-Channel 600V 20A TO247

Supplier's Site
Singapore
600V 20A MOSFET Transistor
278-STW26NM60N
600V 20A MOSFET Transistor 278-STW26NM60N
600V 20A N-CH MOSFET TO-247 165mR Product overview: STW26NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW26NM60N can be used for catalog matching and distributor lookup.

600V 20A N-CH MOSFET TO-247 165mR Product overview: STW26NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW26NM60N can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - STW26NM60N - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW26NM60N
Single FETs, MOSFETs STW26NM60N
MOSFET N-CH 600V 20A TO247-3

MOSFET N-CH 600V 20A TO247-3

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-9066-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-9066-5-ND
Single FETs, MOSFETs 497-9066-5-ND
N-Channel 600V 20A (Tc) 140W (Tc) Through Hole TO-247-3

N-Channel 600V 20A (Tc) 140W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
STW26NM60N
Triode/MOS Tube/Transistor >> MOSFETs STW26NM60N
600V 20A 140W 165mΩ@10V,10A 4V@250uA N Channel TO-247AC-3 MOSFETs ROHS

600V 20A 140W 165mΩ@10V,10A 4V@250uA N Channel TO-247AC-3 MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW26NM60N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW26NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW26NM60N
N-channel 600 V, 0.135 Ohm typ.

N-channel 600 V, 0.135 Ohm typ.

Supplier's Site
Transistor - 32270769 - Radwell International
Willingboro, NJ, United States
Transistor
32270769
Transistor 32270769
POWER MOSFET, N CHANNEL, 20 A, 600 V, 0.135 OHM, 10 V, 3 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

POWER MOSFET, N CHANNEL, 20 A, 600 V, 0.135 OHM, 10 V, 3 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Power Mosfet, N Channel, 20 A, 600 V, 0.135 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics - 94T3541 - Newark, An Avnet Company
Chicago, IL, United States
Power Mosfet, N Channel, 20 A, 600 V, 0.135 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics
94T3541
Power Mosfet, N Channel, 20 A, 600 V, 0.135 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics 94T3541
Power MOSFET, N Channel, 20 A, 600 V, 0.135 ohm, 10 V, 3 V RoHS Compliant: Yes

Power MOSFET, N Channel, 20 A, 600 V, 0.135 ohm, 10 V, 3 V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-channel 600 V Mdmesh II Power

MOSFET N-channel 600 V Mdmesh II Power

Buy Now Datasheet

Technical Specifications

  Win Source Electronics RS Components, Ltd. RS Components, Ltd. ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited Radwell International Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number 005601-STW26NM60N 7610304 7610304P 278-STW26NM60N STW26NM60N 497-9066-5-ND STW26NM60N STW26NM60N 32270769 94T3541 STW26NM60N
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW26NM60N MOSFETs MOSFETs 600V 20A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor Power Mosfet, N Channel, 20 A, 600 V, 0.135 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 600 volts 600 volts 600 volts
PD 140000 milliwatts 140000 milliwatts 140000 milliwatts 140000 milliwatts
TJ 150 C (302 F) -55 C (-67 F) 150 C (302 F) 150 C (302 F)
Package Type TO-247; SOT3; TO-247-3 TO-247; To-247 TO-247; TO-247 TO-247; TO-247-3 TO-247; TO-247-3 TO-247 TO-3
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