STMicroelectronics, Inc. Channel Type Stmicroelectronics STW26NM60N.

Description
Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:140W; No. of Pins:3Pins RoHS Compliant: Yes
Description
Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:140W; No. of Pins:3Pins RoHS Compliant: Yes

Suppliers

Company
Product
Description
Supplier Links
Channel Type Stmicroelectronics - 15AC4532 - Newark, An Avnet Company
Chicago, IL, United States
Channel Type Stmicroelectronics
15AC4532
Channel Type Stmicroelectronics 15AC4532
Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:140W; No. of Pins:3Pins RoHS Compliant: Yes

Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:140W; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Newark, An Avnet Company
Product Category Transistors
Product Number 15AC4532
Product Name Channel Type Stmicroelectronics
Package Type TO-3
Unlock Full Specs
to access all available technical data

Similar Products

DC - 12 GHz, 12 Watt Discrete Power GaN on SiC HEMT - TGF2953 - Qorvo
Specs
Transistor Type HEMT
Transistor Technology / Material GaN on SiC
Package Type Die
View Details
2 suppliers
Bipolar Transistors - 1219444 - RS Components, Ltd.
Specs
Transistor Type BJT
Polarity NPN
Package Type SOT323; Sot-323 (sc-70)
View Details