STMicroelectronics, Inc. Single FETs, MOSFETs STW25NM60ND

Description
MOSFET N-CH 600V 21A TO247-3
Request a Quote Datasheet
Description
MOSFET N-CH 600V 21A TO247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STW25NM60ND - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW25NM60ND
Single FETs, MOSFETs STW25NM60ND
MOSFET N-CH 600V 21A TO247-3

MOSFET N-CH 600V 21A TO247-3

Supplier's Site Datasheet
Transistor - 38979686 - Radwell International
Willingboro, NJ, United States
Transistor
38979686
Transistor 38979686
POWER MOSFET, N CHANNEL, 21 A, 600 V, 0.13 OHM, 10 V, 4 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

POWER MOSFET, N CHANNEL, 21 A, 600 V, 0.13 OHM, 10 V, 4 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW25NM60ND - 031595-STW25NM60ND - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW25NM60ND
031595-STW25NM60ND
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW25NM60ND 031595-STW25NM60ND
Manufacturer: STMicroelectronics Win Source Part Number: 031595-STW25NM60ND Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 21A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 80nC @ 10V Max Input Capacitance: 2400pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 160 mOhm @ 10.5A, 10V Alternative Parts (Cross-Reference): IPW60R160C6; IXKH24N60C5; STW25NM60N; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited Quantity per package: 30

Manufacturer: STMicroelectronics
Win Source Part Number: 031595-STW25NM60ND
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 21A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 2400pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 160 mOhm @ 10.5A, 10V
Alternative Parts (Cross-Reference): IPW60R160C6; IXKH24N60C5; STW25NM60N;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
Quantity per package: 30

Buy Now Datasheet
Single FETs, MOSFETs - 497-8455-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-8455-5-ND
Single FETs, MOSFETs 497-8455-5-ND
N-Channel 600V 21A (Tc) 160W (Tc) Through Hole TO-247-3

N-Channel 600V 21A (Tc) 160W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Power Mosfet, N Channel, 21 A, 600 V, 0.13 Ohm, 10 V, 4 V Rohs Compliant Stmicroelectronics - 94T3539 - Newark, An Avnet Company
Chicago, IL, United States
Power Mosfet, N Channel, 21 A, 600 V, 0.13 Ohm, 10 V, 4 V Rohs Compliant Stmicroelectronics
94T3539
Power Mosfet, N Channel, 21 A, 600 V, 0.13 Ohm, 10 V, 4 V Rohs Compliant Stmicroelectronics 94T3539
Power MOSFET, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V RoHS Compliant: Yes

Power MOSFET, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW25NM60ND - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW25NM60ND
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW25NM60ND
MOSFET N-CH 600V 21A TO247-3

MOSFET N-CH 600V 21A TO247-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-channel 600V, 21A FDMesh II

MOSFET N-channel 600V, 21A FDMesh II

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Radwell International Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number STW25NM60ND 38979686 031595-STW25NM60ND 497-8455-5-ND 94T3539 STW25NM60ND STW25NM60ND
Product Name Single FETs, MOSFETs Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW25NM60ND Single FETs, MOSFETs Power Mosfet, N Channel, 21 A, 600 V, 0.13 Ohm, 10 V, 4 V Rohs Compliant Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
IDSS 21000 milliamps
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