MOSFET N-CH 600V 21A TO247-3
POWER MOSFET, N CHANNEL, 21 A, 600 V, 0.13 OHM, 10 V, 4 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
Manufacturer: STMicroelectronics
Win Source Part Number: 031595-STW25NM60ND
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 21A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 2400pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 160 mOhm @ 10.5A, 10V
Alternative Parts (Cross-Reference): IPW60R160C6; IXKH24N60C5; STW25NM60N;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
Quantity per package: 30
N-Channel 600V 21A (Tc) 160W (Tc) Through Hole TO-247-3
Power MOSFET, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET N-CH 600V 21A TO247-3
MOSFET N-channel 600V, 21A FDMesh II
| ODG (Origin Data Global) | Radwell International | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STW25NM60ND | 38979686 | 031595-STW25NM60ND | 497-8455-5-ND | 94T3539 | STW25NM60ND | STW25NM60ND |
| Product Name | Single FETs, MOSFETs | Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW25NM60ND | Single FETs, MOSFETs | Power Mosfet, N Channel, 21 A, 600 V, 0.13 Ohm, 10 V, 4 V Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 600 volts | 600 volts | |||||
| IDSS | 21000 milliamps |