STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW24N60DM2 STW24N60DM2

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1262355-STW24N60DM2 Series: FDmesh II Plus Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Family Name: STW24N60DM2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: TO-247 Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1055pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 150W (Tc) Rds On (Maximum) @ Id, Vgs: 200 mOhm @ 9A, 10V Alternative Parts (Cross-Reference): SPW32N50C3X; SPW32N50C3XK; SPW32N50C3; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW24N60DM2 - 1262355-STW24N60DM2 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-14582-5-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW24N60DM2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 600V, 18A, To-247; Channel Type Stmicroelectronics - 45AC7781 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1262355-STW24N60DM2 Series: FDmesh II Plus Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Family Name: STW24N60DM2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: TO-247 Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1055pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 150W (Tc) Rds On (Maximum) @ Id, Vgs: 200 mOhm @ 9A, 10V Alternative Parts (Cross-Reference): SPW32N50C3X; SPW32N50C3XK; SPW32N50C3; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW24N60DM2 - 1262355-STW24N60DM2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW24N60DM2
1262355-STW24N60DM2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW24N60DM2 1262355-STW24N60DM2
Manufacturer: STMicroelectronics Win Source Part Number: 1262355-STW24N60DM2 Series: FDmesh II Plus Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Family Name: STW24N60DM2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: TO-247 Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1055pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 150W (Tc) Rds On (Maximum) @ Id, Vgs: 200 mOhm @ 9A, 10V Alternative Parts (Cross-Reference): SPW32N50C3X; SPW32N50C3XK; SPW32N50C3; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1262355-STW24N60DM2
Series: FDmesh II Plus
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Family Name: STW24N60DM2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1055pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 150W (Tc)
Rds On (Maximum) @ Id, Vgs: 200 mOhm @ 9A, 10V
Alternative Parts (Cross-Reference): SPW32N50C3X; SPW32N50C3XK; SPW32N50C3;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-14582-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14582-5-ND
Single FETs, MOSFETs 497-14582-5-ND
N-Channel 600V 18A (Tc) 150W (Tc) Through Hole TO-247-3

N-Channel 600V 18A (Tc) 150W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW24N60DM2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW24N60DM2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW24N60DM2
MOSFET N-CH 600V 18A TO247

MOSFET N-CH 600V 18A TO247

Supplier's Site
Mosfet, N-Ch, 600V, 18A, To-247; Channel Type Stmicroelectronics - 45AC7781 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 18A, To-247; Channel Type Stmicroelectronics
45AC7781
Mosfet, N-Ch, 600V, 18A, To-247; Channel Type Stmicroelectronics 45AC7781
MOSFET, N-CH, 600V, 18A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 600V, 18A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STW24N60DM2
MOSFET STW24N60DM2
MOSFET N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2

MOSFET N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Power MOSFET Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1262355-STW24N60DM2 497-14582-5-ND STW24N60DM2 45AC7781 STW24N60DM2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW24N60DM2 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 600V, 18A, To-247; Channel Type Stmicroelectronics MOSFET
QG 29 nC
PD 150000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Package Type TO-220; TO-247; SOT3 TO-247; TO-247-3 TO-247; TO-247-3 TO-3; TO-247
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