STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW21NM60ND STW21NM60ND

Description
Manufacturer: STMicroelectronics Win Source Part Number: 031594-STW21NM60ND Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1800pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 220 mOhm @ 8.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Quantity per package: 30
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW21NM60ND - 031594-STW21NM60ND - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-8453-5-ND - DigiKey
    DigiKey
  • Transistor - 38979662 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW21NM60ND - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 031594-STW21NM60ND Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1800pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 220 mOhm @ 8.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Quantity per package: 30
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW21NM60ND - 031594-STW21NM60ND - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW21NM60ND
031594-STW21NM60ND
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW21NM60ND 031594-STW21NM60ND
Manufacturer: STMicroelectronics Win Source Part Number: 031594-STW21NM60ND Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1800pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 220 mOhm @ 8.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Quantity per package: 30

Manufacturer: STMicroelectronics
Win Source Part Number: 031594-STW21NM60ND
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 140W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 1800pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 220 mOhm @ 8.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
Quantity per package: 30

Buy Now Datasheet
Single FETs, MOSFETs - 497-8453-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-8453-5-ND
Single FETs, MOSFETs 497-8453-5-ND
N-Channel 600V 17A (Tc) 140W (Tc) Through Hole TO-247-3

N-Channel 600V 17A (Tc) 140W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Transistor - 38979662 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
38979662
Transistor 38979662
TRANSISTOR, ENHANCMENT, MOSFET, N CHANNEL, 600V, 17A, 140W, TO-247-3. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, ENHANCMENT, MOSFET, N CHANNEL, 600V, 17A, 140W, TO-247-3. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW21NM60ND - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW21NM60ND
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW21NM60ND
MOSFET N-CH 600V 17A TO247-3

MOSFET N-CH 600V 17A TO247-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors RF Transistors
Product Number 031594-STW21NM60ND 497-8453-5-ND 38979662 STW21NM60ND
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW21NM60ND Single FETs, MOSFETs Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts
PD 140000 milliwatts
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