STMicroelectronics, Inc. Single FETs, MOSFETs STW20N65M5

Description
MOSFET N-CH 650V 18A TO247
Request a Quote Datasheet
Description
MOSFET N-CH 650V 18A TO247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STW20N65M5 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW20N65M5
Single FETs, MOSFETs STW20N65M5
MOSFET N-CH 650V 18A TO247

MOSFET N-CH 650V 18A TO247

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-13542-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13542-ND
Single FETs, MOSFETs 497-13542-ND
N-Channel 650V 18A (Tc) 130W (Tc) Through Hole TO-247-3

N-Channel 650V 18A (Tc) 130W (Tc) Through Hole TO-247-3

Buy Now Datasheet
FETs - Single - STW20N65M5 - 1262350-STW20N65M5 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STW20N65M5
1262350-STW20N65M5
FETs - Single - STW20N65M5 1262350-STW20N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 1262350-STW20N65M5 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 130W Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 650V Id - Continuous Drain Current: 18A Rds On (Maximum) at Id, Vgs: 190mOhm at 9A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 45nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1345pF at 100V

Manufacturer: STMicroelectronics
Win Source Part Number: 1262350-STW20N65M5
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 130W
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 18A
Rds On (Maximum) at Id, Vgs: 190mOhm at 9A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 45nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 1345pF at 100V

Buy Now
Sheung Wan, Hong Kong
MOSFET N-Ch 650V 0.168 Ohm 18A Mdmesh M5

MOSFET N-Ch 650V 0.168 Ohm 18A Mdmesh M5

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW20N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW20N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW20N65M5
MOSFET N-CH 650V 18A TO247

MOSFET N-CH 650V 18A TO247

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STW20N65M5 497-13542-ND 1262350-STW20N65M5 STW20N65M5 STW20N65M5
Product Name Single FETs, MOSFETs Single FETs, MOSFETs FETs - Single - STW20N65M5 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 650 volts 650 volts
IDSS 18000 milliamps
PD 130000 milliwatts 130000 milliwatts
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