STMicroelectronics, Inc. FETs - Single - STW20N65M5 STW20N65M5

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1262350-STW20N65M5 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 130W Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 650V Id - Continuous Drain Current: 18A Rds On (Maximum) at Id, Vgs: 190mOhm at 9A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 45nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1345pF at 100V
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1262350-STW20N65M5 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 130W Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 650V Id - Continuous Drain Current: 18A Rds On (Maximum) at Id, Vgs: 190mOhm at 9A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 45nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1345pF at 100V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STW20N65M5 - 1262350-STW20N65M5 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STW20N65M5
1262350-STW20N65M5
FETs - Single - STW20N65M5 1262350-STW20N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 1262350-STW20N65M5 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 130W Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 650V Id - Continuous Drain Current: 18A Rds On (Maximum) at Id, Vgs: 190mOhm at 9A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 45nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1345pF at 100V

Manufacturer: STMicroelectronics
Win Source Part Number: 1262350-STW20N65M5
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 130W
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 18A
Rds On (Maximum) at Id, Vgs: 190mOhm at 9A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 45nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 1345pF at 100V

Buy Now
Singapore
650V 18A MOSFET Transistor
278-STW20N65M5
650V 18A MOSFET Transistor 278-STW20N65M5
650V 18A N-CH MOSFET TO-247 190mR RdsOn Product overview: STW20N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW20N65M5 can be used for catalog matching and distributor lookup.

650V 18A N-CH MOSFET TO-247 190mR RdsOn Product overview: STW20N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW20N65M5 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-13542-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13542-ND
Single FETs, MOSFETs 497-13542-ND
N-Channel 650V 18A (Tc) 130W (Tc) Through Hole TO-247-3

N-Channel 650V 18A (Tc) 130W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Single FETs, MOSFETs - STW20N65M5 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW20N65M5
Single FETs, MOSFETs STW20N65M5
MOSFET N-CH 650V 18A TO247

MOSFET N-CH 650V 18A TO247

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW20N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW20N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW20N65M5
MOSFET N-CH 650V 18A TO247

MOSFET N-CH 650V 18A TO247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 650V 0.168 Ohm 18A Mdmesh M5

MOSFET N-Ch 650V 0.168 Ohm 18A Mdmesh M5

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1262350-STW20N65M5 278-STW20N65M5 497-13542-ND STW20N65M5 STW20N65M5 STW20N65M5
Product Name FETs - Single - STW20N65M5 650V 18A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 650 volts 650 volts
QG 45 nC
PD 130000 milliwatts 130000 milliwatts 130000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data