STMicroelectronics, Inc. Single FETs, MOSFETs STW18NM80

Description
MOSFET N-CH 800V 17A TO247-3
  • Single FETs, MOSFETs - STW18NM80 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW18NM80 - 087484-STW18NM80 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-10085-5-ND - DigiKey
    DigiKey
  • N Channel Power Mosfet, Mdmesh, 800V, 17A, To-247; Channel Type Stmicroelectronics - 55R7026 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW18NM80 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET N-CH 800V 17A TO247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STW18NM80 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW18NM80
Single FETs, MOSFETs STW18NM80
MOSFET N-CH 800V 17A TO247-3

MOSFET N-CH 800V 17A TO247-3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW18NM80 - 087484-STW18NM80 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW18NM80
087484-STW18NM80
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW18NM80 087484-STW18NM80
Manufacturer: STMicroelectronics Win Source Part Number: 087484-STW18NM80 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 2070pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 295 mOhm @ 8.5A, 10V Alternative Parts (Cross-Reference): APT48M80B2; STW23N85K5; STW18NM80; IXFX44N80P; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 087484-STW18NM80
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 2070pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 295 mOhm @ 8.5A, 10V
Alternative Parts (Cross-Reference): APT48M80B2; STW23N85K5; STW18NM80; IXFX44N80P;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-10085-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10085-5-ND
Single FETs, MOSFETs 497-10085-5-ND
N-Channel 800V 17A (Tc) 190W (Tc) Through Hole TO-247-3

N-Channel 800V 17A (Tc) 190W (Tc) Through Hole TO-247-3

Buy Now Datasheet
N Channel Power Mosfet, Mdmesh, 800V, 17A, To-247; Channel Type Stmicroelectronics - 55R7026 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Power Mosfet, Mdmesh, 800V, 17A, To-247; Channel Type Stmicroelectronics
55R7026
N Channel Power Mosfet, Mdmesh, 800V, 17A, To-247; Channel Type Stmicroelectronics 55R7026
N CHANNEL POWER MOSFET, MDmesh, 800V, 17A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:190W; MSL:- RoHS Compliant: Yes

N CHANNEL POWER MOSFET, MDmesh, 800V, 17A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:190W; MSL:- RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STW18NM80
MOSFET STW18NM80
MOSFET N-channel 800 V MDMesh

MOSFET N-channel 800 V MDMesh

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW18NM80 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW18NM80
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW18NM80
MOSFET N-CH 800V 17A TO247-3

MOSFET N-CH 800V 17A TO247-3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STW18NM80 087484-STW18NM80 497-10085-5-ND 55R7026 STW18NM80 STW18NM80
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW18NM80 Single FETs, MOSFETs N Channel Power Mosfet, Mdmesh, 800V, 17A, To-247; Channel Type Stmicroelectronics MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 800 volts 800 volts
IDSS 17000 milliamps 17000 milliamps
Unlock Full Specs
to access all available technical data