STMicroelectronics, Inc. Single FETs, MOSFETs STW18NM60N

Description
N-Channel 600V 13A (Tc) 110W (Tc) Through Hole TO-247-3
  • Single FETs, MOSFETs - 497-STW18NM60N-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - STW18NM60N - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW18NM60N - 031591-STW18NM60N - Win Source Electronics
    Win Source Electronics
  • Power Mosfet, N Channel, 13 A, 600 V, 0.26 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics - 94T3529 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW18NM60N - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-Channel 600V 13A (Tc) 110W (Tc) Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-STW18NM60N-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-STW18NM60N-ND
Single FETs, MOSFETs 497-STW18NM60N-ND
N-Channel 600V 13A (Tc) 110W (Tc) Through Hole TO-247-3

N-Channel 600V 13A (Tc) 110W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Single FETs, MOSFETs - STW18NM60N - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW18NM60N
Single FETs, MOSFETs STW18NM60N
MOSFET N-CH 600V 13A TO247-3

MOSFET N-CH 600V 13A TO247-3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW18NM60N - 031591-STW18NM60N - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW18NM60N
031591-STW18NM60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW18NM60N 031591-STW18NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 031591-STW18NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Family Name: STW18NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 13A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 1030pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 290 mOhm @ 6.5A, 10V Alternative Parts (Cross-Reference): IPW50R280CE; IPW50R280CEFKSA1; IXFH36N55Q2; Introduction Date: June 15, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 031591-STW18NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Family Name: STW18NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 13A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 34nC @ 10V
Max Input Capacitance: 1030pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 290 mOhm @ 6.5A, 10V
Alternative Parts (Cross-Reference): IPW50R280CE; IPW50R280CEFKSA1; IXFH36N55Q2;
Introduction Date: June 15, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STW18NM60N
MOSFET STW18NM60N
MOSFET N-channel 600 V 0.27ohms 13A Mdmesh

MOSFET N-channel 600 V 0.27ohms 13A Mdmesh

Buy Now Datasheet
Power Mosfet, N Channel, 13 A, 600 V, 0.26 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics - 94T3529 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Power Mosfet, N Channel, 13 A, 600 V, 0.26 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics
94T3529
Power Mosfet, N Channel, 13 A, 600 V, 0.26 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics 94T3529
Power MOSFET, N Channel, 13 A, 600 V, 0.26 ohm, 10 V, 3 V RoHS Compliant: Yes

Power MOSFET, N Channel, 13 A, 600 V, 0.26 ohm, 10 V, 3 V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW18NM60N - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW18NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW18NM60N
MOSFET N-CH 600V 13A TO247-3

MOSFET N-CH 600V 13A TO247-3

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors
Product Number 497-STW18NM60N-ND STW18NM60N 031591-STW18NM60N STW18NM60N 94T3529 STW18NM60N
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW18NM60N MOSFET Power Mosfet, N Channel, 13 A, 600 V, 0.26 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type TO-247; TO-247-3 TO-247; TO-247-3 TO-247; SOT3; TO-247 TO-3 TO-247; TO-247-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
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