N-Channel 600V 13A (Tc) 110W (Tc) Through Hole TO-247-3
MOSFET N-CH 600V 13A TO247-3
600V 13A N-Ch MOSFET TO-247 Product overview: STW18NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW18NM60N can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 031591-STW18NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Family Name: STW18NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 13A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 34nC @ 10V
Max Input Capacitance: 1030pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 290 mOhm @ 6.5A, 10V
Alternative Parts (Cross-Reference): IPW50R280CE; IPW50R280CEFKSA1; IXFH36N55Q2;
Introduction Date: June 15, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
Power MOSFET, N Channel, 13 A, 600 V, 0.26 ohm, 10 V, 3 V RoHS Compliant: Yes
MOSFET N-CH 600V 13A TO247-3
MOSFET N-channel 600 V 0.27ohms 13A Mdmesh
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-STW18NM60N-ND | STW18NM60N | 278-STW18NM60N | 031591-STW18NM60N | 94T3529 | STW18NM60N | STW18NM60N |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 600V 13A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW18NM60N | Power Mosfet, N Channel, 13 A, 600 V, 0.26 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; SOT3; TO-247 | TO-3 | TO-247; TO-247-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 600 volts | 600 volts |
